Oxidation-Free Copper Metallization Process Using In-situ Baking
First Claim
1. A method of forming an integrated circuit structure, the method comprising:
- providing a substrate;
forming a metal feature over the substrate;
forming a dielectric layer over the metal feature;
forming an opening in the dielectric layer, wherein at least a portion of the metal feature is exposed through the opening, and wherein an oxide layer is formed on an exposed portion of the metal feature;
in a production tool having a vacuum environment, performing an oxide-removal process to remove the oxide layer, wherein between the step of forming the opening and the oxide-removal process, no additional oxide-removal process is performed to the metal feature outside the production tool;
in the production tool, forming a diffusion barrier layer in the opening; and
in the production tool, forming a seed layer on the diffusion barrier layer.
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Abstract
A method of forming an integrated circuit structure includes providing a substrate; forming a metal feature over the substrate; forming a dielectric layer over the metal feature; and forming an opening in the dielectric layer. At least a portion of the metal feature is exposed through the opening. An oxide layer is accordingly formed on an exposed portion of the metal feature. The method further includes, in a production tool having a vacuum environment, performing an oxide-removal process to remove the oxide layer. Between the step of forming the opening and the oxide-removal process, no additional oxide-removal process is performed to the metal feature outside the production tool. The method further includes, in the production tool, forming a diffusion barrier layer in the opening, and forming a seed layer on the diffusion barrier layer
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Citations
18 Claims
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1. A method of forming an integrated circuit structure, the method comprising:
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providing a substrate; forming a metal feature over the substrate; forming a dielectric layer over the metal feature; forming an opening in the dielectric layer, wherein at least a portion of the metal feature is exposed through the opening, and wherein an oxide layer is formed on an exposed portion of the metal feature; in a production tool having a vacuum environment, performing an oxide-removal process to remove the oxide layer, wherein between the step of forming the opening and the oxide-removal process, no additional oxide-removal process is performed to the metal feature outside the production tool; in the production tool, forming a diffusion barrier layer in the opening; and in the production tool, forming a seed layer on the diffusion barrier layer. - View Dependent Claims (2, 3, 4, 5, 6)
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7. A method of forming an integrated circuit structure, the method comprising:
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providing a substrate; forming a metal feature over the substrate; forming a dielectric layer over the metal feature; forming an opening in the dielectric layer, wherein at least a portion of the metal feature is exposed through the opening, and wherein an oxide layer is formed on an exposed portion of the metal feature; in a production tool having a vacuum environment, baking the substrate, wherein a process gas for reducing the oxide layer to metal is introduced to the production tool when the substrate is being baked; forming a diffusion barrier layer in the opening; and forming a seed layer on the diffusion barrier layer, wherein the steps of forming the diffusion barrier layer and forming the seed layer are performed in the production tool. - View Dependent Claims (8, 9, 10, 11, 12, 13)
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14. A method of forming an integrated circuit structure, the method comprising:
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providing a substrate; providing a production tool comprising a baking chamber, a first and a second deposition chamber, and a transfer chamber for transferring wafers between the baking chamber and the first and the second deposition chambers; forming a first dielectric layer over the substrate; forming a copper line in the first dielectric layer; forming a second dielectric layer over the copper line and the first dielectric layer, wherein the second dielectric layer has a low k value; forming an opening in the second dielectric layer, wherein at least a portion of the copper line is exposed through the opening, and wherein a copper oxide layer is formed on an exposed portion of the copper line; baking the substrate in the first deposition chamber of the production tool, wherein hydrogen is introduced into the first deposition chamber during the step of baking; transferring the substrate from the baking chamber to the first deposition chamber through the transfer chamber, wherein no vacuum break occurs in the production tool; in the first deposition chamber, forming a diffusion barrier layer in the opening; transferring the substrate from the first deposition chamber to the second deposition chamber through the transfer chamber, wherein no vacuum break occurs in the production tool; in the second deposition chamber, forming a seed layer on the diffusion barrier layer; and plating copper on the seed layer to fill the opening. - View Dependent Claims (15, 16, 17, 18)
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Specification