SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD OF MANUFACTURING THE SAME
First Claim
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1. A method of manufacturing a semiconductor light emitting device having a nano pattern, the method comprising:
- (a) forming a first semiconductor layer on a substrate;
(b) forming an uneven structure by patterning the first semiconductor layer;
(c) forming a nano pattern by filling the uneven structure of the first semiconductor layer with light-transmissive material; and
(d) sequentially forming a second semiconductor layer, an active layer, and a third semiconductor layer on the first semiconductor layer.
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Abstract
Provided are a semiconductor light emitting device having a nano pattern and a method of manufacturing the semiconductor light emitting device. The semiconductor light emitting device includes: a semiconductor layer comprising a plurality of nano patterns, wherein the plurality of nano patterns are formed inside the semiconductor layer; and an active layer formed on the semiconductor layer. The optical output efficiency is increased and inner defects of the semiconductor light emitting device are reduced.
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Citations
6 Claims
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1. A method of manufacturing a semiconductor light emitting device having a nano pattern, the method comprising:
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(a) forming a first semiconductor layer on a substrate; (b) forming an uneven structure by patterning the first semiconductor layer; (c) forming a nano pattern by filling the uneven structure of the first semiconductor layer with light-transmissive material; and (d) sequentially forming a second semiconductor layer, an active layer, and a third semiconductor layer on the first semiconductor layer. - View Dependent Claims (2, 3, 4, 5, 6)
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Specification