Method and Structure for Dividing a Substrate into Individual Devices
First Claim
1. A method for obtaining individual dies from a semiconductor structure that includes a device layer, the device layer in turn including active regions separated by predefined spacings, the method comprising:
- selectively forming thick metal on backside of the device layer such that thick metal is formed on backside of active regions but not on backside of the predefined spacings; and
cutting the semiconductor structure along the predefined spacings to separate the active regions with thick metal on their backside into individual dies.
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Abstract
A method for obtaining individual dies from a semiconductor structure is disclosed. The semiconductor structure includes a device layer, and the device layer in turn includes active regions separated by predefined spacings. Thick metal is selectively formed on backside of the device layer such that thick metal is formed on backside of active regions but not on backside of the predefined spacings. The semiconductor structure is then cut along the predefined spacings to separate the active regions with thick metal on their backside into individual dies.
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Citations
23 Claims
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1. A method for obtaining individual dies from a semiconductor structure that includes a device layer, the device layer in turn including active regions separated by predefined spacings, the method comprising:
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selectively forming thick metal on backside of the device layer such that thick metal is formed on backside of active regions but not on backside of the predefined spacings; and cutting the semiconductor structure along the predefined spacings to separate the active regions with thick metal on their backside into individual dies. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8)
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9. A method for obtaining individual dies from a semiconductor structure that includes a device layer, the device layer in turn including active regions separated by predefined spacings, the method comprising:
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forming a vertically extending structure along a backside of the predefined spacings such that the vertically extending structure surrounds each active region to thereby form an opening on the backside of each active region; forming a thick metal in each opening; cutting through the vertically extending structure to separate the active regions with thick metal on their backside into individual dies. - View Dependent Claims (10, 11, 12, 13, 14, 15, 16)
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17. A method for obtaining individual dies from a semiconductor structure that includes a device layer which in turn includes active regions separated by predefined spacings, the method comprising:
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forming a thick metal layer on backside of the device layer; using a masking layer, removing portions of the thick metal layer so that surface regions along a backside of the device layer are exposed such that the exposed surface regions are substantially aligned the predefined spacings, wherein after removing portions of the thick metal layer, islands of thick metal layer remain on the backside of the device layer; and after removing portions of the thick metal layer, cutting the semiconductor structure along the exposed backside surface regions. - View Dependent Claims (18, 19, 20, 21, 22, 23)
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Specification