PHOTONIC CRYSTAL LIGHT EMITTING DEVICE AND MANUFACTURING METHOD OF THE SAME
First Claim
1. A photonic crystal light emitting device comprising:
- a light emitting structure including first and second conductivity type semiconductor layers and an active layer interposed therebetween;
a transparent electrode layer formed on the second conductivity type semiconductor layer, the transparent electrode layer having a plurality of holes arranged with a predetermined size and period so as to form a photonic band gap for light emitted from the active layer, whereby the transparent electrode layer comprises a photonic crystal structure; and
first and second electrodes electrically connected to the first conductivity type semiconductor layer and the transparent electrode layer, respectively.
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Abstract
There is provided a photonic crystal light emitting device including: a light emitting structure including first and second conductivity type semiconductor layers and an active layer interposed therebetween; a transparent electrode layer formed on the second conductivity type semiconductor layer, the transparent electrode layer having a plurality of holes arranged with a predetermined size and period so as to form a photonic band gap for light emitted from the active layer, whereby the transparent electrode layer includes a photonic crystal structure; and first and second electrode electrically connected to the first conductivity type semiconductor layer and the transparent electrode layer, respectively. The photonic crystal light emitting device has a transparent electrode layer formed of a photonic crystal structure defined by minute holes, thereby improved in light extraction efficiency.
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Citations
17 Claims
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1. A photonic crystal light emitting device comprising:
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a light emitting structure including first and second conductivity type semiconductor layers and an active layer interposed therebetween; a transparent electrode layer formed on the second conductivity type semiconductor layer, the transparent electrode layer having a plurality of holes arranged with a predetermined size and period so as to form a photonic band gap for light emitted from the active layer, whereby the transparent electrode layer comprises a photonic crystal structure; and first and second electrodes electrically connected to the first conductivity type semiconductor layer and the transparent electrode layer, respectively. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9)
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10. A method of manufacturing a photonic crystal light emitting device, the method comprising:
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forming a first conductivity type semiconductor layer, an active layer and a second conductivity type semiconductor layer sequentially on a substrate; forming photoresist patterns on the second conductivity type semiconductor layer; forming a transparent electrode layer on a portion of the second conductivity type semiconductor layer where the photo resist patterns are not formed; removing the photo resist patterns; and forming first and second electrodes to electrically connect to the first conductivity type semiconductor layer and the transparent electrode layer, respectively, wherein portions of the second conductivity type semiconductor layer where the photo resist patterns are removed are arranged with a predetermined size and period so as to form a photonic band gap for light emitted from the active layer, thereby defining a photonic crystal structure together with the transparent electrode layer. - View Dependent Claims (11, 12)
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13. A method of manufacturing a photonic crystal light emitting device, the method comprising:
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forming a first conductivity type semiconductor layer, an active layer and a second conductivity type semiconductor layer sequentially on a substrate; forming a photonic crystal structure layer on the second conductivity type semiconductor layer; forming photo resist patterns on the photonic crystal structure layer; forming photonic crystal patterns by removing a portion of the photonic crystal structure layer where the photo resist patterns are not formed; forming a transparent electrode layer on the removed portion of the photonic crystal structure layer; removing the photo resist patterns; and forming first and second electrodes to electrically connect to the first conductivity type semiconductor layer and the transparent electrode layer, respectively, wherein the photonic crystal patterns are arranged with a predetermined size and period so as to form a photonic band gap for light emitted from the active layer, thereby defining a photonic crystal structure together with the transparent electrode layer. - View Dependent Claims (14, 15, 16, 17)
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Specification