METHOD FOR ENHANCING GROWTH OF SEMI-POLAR (AL,IN,GA,B)N VIA METALORGANIC CHEMICAL VAPOR DEPOSITION
First Claim
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1. A method for growing a semi-polar nitride semiconductor film via metalorganic chemical vapor deposition (MOCVD) on a substrate, comprising:
- (a) growing a nitride nucleation or buffer layer on a substrate; and
(b) growing a semi-polar nitride semiconductor film on the nitride nucleation or buffer layer, wherein a growth surface of the semi-polar nitride semiconductor film is parallel to the substrate'"'"'s surface.
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Abstract
A method for growing a semi-polar nitride semiconductor thin film via metalorganic chemical vapor deposition (MOCVD) on a substrate, wherein a nitride nucleation or buffer layer is grown on the substrate prior to the growth of the semi-polar nitride semiconductor thin film.
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Citations
12 Claims
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1. A method for growing a semi-polar nitride semiconductor film via metalorganic chemical vapor deposition (MOCVD) on a substrate, comprising:
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(a) growing a nitride nucleation or buffer layer on a substrate; and (b) growing a semi-polar nitride semiconductor film on the nitride nucleation or buffer layer, wherein a growth surface of the semi-polar nitride semiconductor film is parallel to the substrate'"'"'s surface. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12)
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