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Non-volatile memory device and method of fabricating the same

  • US 20090184360A1
  • Filed: 10/03/2008
  • Published: 07/23/2009
  • Est. Priority Date: 01/18/2008
  • Status: Active Grant
First Claim
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1. A non-volatile memory device comprising:

  • at least one semiconductor column;

    at least one first control gate electrode arranged on a first side of the at least one semiconductor column;

    at least one second control gate electrode arranged on a second side of the at least one semiconductor column;

    a first charge storage layer between the at least one first control gate electrode and the at least one semiconductor column; and

    a second charge storage layer between the at least one second control gate electrode and the at least one semiconductor column.

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