Non-volatile memory device and method of fabricating the same
First Claim
1. A non-volatile memory device comprising:
- at least one semiconductor column;
at least one first control gate electrode arranged on a first side of the at least one semiconductor column;
at least one second control gate electrode arranged on a second side of the at least one semiconductor column;
a first charge storage layer between the at least one first control gate electrode and the at least one semiconductor column; and
a second charge storage layer between the at least one second control gate electrode and the at least one semiconductor column.
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Accused Products
Abstract
Provided are a non-volatile memory device that may expand to a stacked structure and may be more easily highly integrated and an economical method of fabricating the non-volatile memory device. The non-volatile memory device may include at least one semiconductor column. At least one first control gate electrode may be arranged on a first side of the at least one semiconductor column. At least one second control gate electrode may be arranged on a second side of the at least one semiconductor column. A first charge storage layer may be between the at least one first control gate electrode and the at least one semiconductor column. A second charge storage layer may be between the at least one second control gate electrode and the at least one semiconductor column.
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Citations
25 Claims
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1. A non-volatile memory device comprising:
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at least one semiconductor column; at least one first control gate electrode arranged on a first side of the at least one semiconductor column; at least one second control gate electrode arranged on a second side of the at least one semiconductor column; a first charge storage layer between the at least one first control gate electrode and the at least one semiconductor column; and a second charge storage layer between the at least one second control gate electrode and the at least one semiconductor column. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16)
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17. A method of fabricating a non-volatile memory device, the method comprising:
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providing at least one conductive layer; forming at least one trench in the at least one conductive layer; forming a charge storage layer on an inner surface of the at least one trench; forming at least one semiconductor column in the at least one trench on which the charge storage layer is formed; and patterning the at least one conductive layer to form at least one first control gate electrode and at least one second control gate electrode separate from one another with the at least one semiconductor column therebetween. - View Dependent Claims (18, 19, 20, 21, 22, 23, 24, 25)
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Specification