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ARRAY OF MUTUALLY ISOLATED, GEIGER-MODE, AVALANCHE PHOTODIODES AND MANUFACTURING METHOD THEREOF

  • US 20090184384A1
  • Filed: 01/20/2009
  • Published: 07/23/2009
  • Est. Priority Date: 01/18/2008
  • Status: Active Grant
First Claim
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1. An array of Geiger-mode avalanche photodiodes, comprising a body of semiconductor material of a first conductivity type, having a top surface and a bottom surface, wherein each photodiode comprises:

  • an anode region, of the second conductivity type, extending inside said body and facing said top surface;

    a cathode region of the first conductivity type and a higher doping level than said body, extending inside said body; and

    an insulation region extending through said body and insulating an active area from the rest of said body, the active area housing the anode region, said insulation region comprising a first mirror region of metal material;

    wherein said cathode region comprises a cathode-contact region, facing said bottom surface, and a resistive region defining a vertical quenching resistor extending between said anode region and said cathode-contact region.

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