PRECURSOR COMPOSITION FOR POROUS THIN FILM, METHOD FOR PREPARATION OF THE PRECURSOR COMPOSITION, POROUS THIN FILM, METHOD FOR PREPARATION OF THE POROUS THIN FILM, AND SEMICONDUCTOR DEVICE
First Claim
1. A precursor composition for forming a porous thin film comprising at least one member selected from the group consisting of compounds (A) represented by the following general formula (1) and compounds (B) represented by the following general formula (2):
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Si(OR1)4
(1)
Ra(Si)(OR2)4-a
(2)(In the foregoing formulas (1) and (2), R1 represents a monovalent organic group;
R represents a hydrogen atom, a fluorine atom or a monovalent organic group;
R2 represents a monovalent organic group;
a is an integer ranging from 1 to 3, provided that R, R1and R2 may be the same or different from one another);
a heat decomposable organic compound (C) which undergoes heat decomposition at a temperature of not less than 250°
C.;
at least one element (D) selected from the group consisting of amphoteric elements having an electronegativity of not higher than 2.5, elements having an ionic radius of not less than 1.6 Å and
elements having an atomic weight of not less than 130; and
further a compound (E) which is thermally decomposed at a temperature ranging from 90 to 200°
C. and can form an amine through the thermal decomposition and whose aqueous solution and/or solution in an alcohol/water mixed solvent have a pH value falling within the range of from 6.5 to 8, at a temperature of not higher than the heat-decomposition temperature thereof.
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Accused Products
Abstract
Disclosed is a precursor composition comprising: a compound selected from a compound represented by the formula: Si(OR1)4 and a compound represented by the formula Ra(Si) (OR2)4-a (in the formulas represents a monovalent organic group; R represents a hydrogen atom, a fluorine atom or a monovalent organic group; R2 represents a monovalent organic group; and a is an integer ranging from 1 to 3, provided that R, R1 and R2 may be the same or different from one another) a thermally degradable organic compound; an element having a catalyst activity; urea; and the like. A porous thin film produced from the precursor composition is irradiated with ultraviolet ray, and then subjected to gas-phase reaction with a hydrophobic compound. A porous thin film thus prepared can be used for the manufacture of a semiconductor device.
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Citations
24 Claims
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1. A precursor composition for forming a porous thin film comprising at least one member selected from the group consisting of compounds (A) represented by the following general formula (1) and compounds (B) represented by the following general formula (2):
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Si(OR1)4
(1)
Ra(Si)(OR2)4-a
(2)(In the foregoing formulas (1) and (2), R1 represents a monovalent organic group;
R represents a hydrogen atom, a fluorine atom or a monovalent organic group;
R2 represents a monovalent organic group;
a is an integer ranging from 1 to 3, provided that R, R1and R2 may be the same or different from one another);
a heat decomposable organic compound (C) which undergoes heat decomposition at a temperature of not less than 250°
C.;
at least one element (D) selected from the group consisting of amphoteric elements having an electronegativity of not higher than 2.5, elements having an ionic radius of not less than 1.6 Å and
elements having an atomic weight of not less than 130; and
further a compound (E) which is thermally decomposed at a temperature ranging from 90 to 200°
C. and can form an amine through the thermal decomposition and whose aqueous solution and/or solution in an alcohol/water mixed solvent have a pH value falling within the range of from 6.5 to 8, at a temperature of not higher than the heat-decomposition temperature thereof.- View Dependent Claims (2, 3, 4, 5, 6, 19, 20, 21, 22, 23, 24)
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7. A method for the preparation of a precursor composition for forming a porous thin film comprising the steps of blending, in an organic solvent, at least one member selected from the group consisting of compounds (A) represented by the following general formula (1) and compounds (B) represented by the following general formula (2):
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Si(OR1)4
(1)
Ra(Si)(OR2)4-a
(2)(In the foregoing formulas (1) and (2), R1 represents a monovalent organic group;
R represents a hydrogen atom, a fluorine atom or a monovalent organic group;
R2 represents a monovalent organic group; and
a is an integer ranging from 1 to 3, provided that R, R1and R2 may be the same or different from one another);
a heat decomposable organic compound (C) which undergoes heat decomposition at a temperature of not less than 250°
C.; and
at least one element (D) selected from the group consisting of amphoteric elements having an electronegativity of not higher than 2.5, elements having an ionic radius of not less than 1.6 Å and
elements having an atomic weight of not less than 130, or at least one compound containing the element (D); and
then mixing the resulting mixed solution with a compound (E) which is thermally decomposed at a temperature ranging from 90 to 200°
C. and can generate an amine through the thermal decomposition and whose aqueous solution and/or solution in an alcohol/water mixed solvent have a pH value falling within the range of from 6.5 to 8, at a temperature of not higher than the heat-decomposition temperature thereof.- View Dependent Claims (8, 9, 10, 11, 12)
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13. A method for the preparation of a precursor composition for forming a porous thin film comprising the steps of blending, in an organic solvent, at least one member selected from the group consisting of compounds (A) represented by the following general formula (1) and compounds (B) represented by the following general formula (2):
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Si(OR1)4
(1)
Ra(Si)(OR2)4-a
(2)(In the foregoing formulas (1) and (2), R1 represents a monovalent organic group;
R represents a hydrogen atom, a fluorine atom or a monovalent organic group;
R2 represents a monovalent organic group; and
a is an integer ranging from 1 to 3, provided that R, R1and R2 may be the same or different from one another), with a heat decomposable compound (C) which undergoes heat decomposition at a temperature of not less than 250°
C., to give a mixed solution;
adding, to the resulting mixed solution, at least one element (D) selected from the group consisting of amphoteric elements having an electronegativity of not higher than 2.5, elements having an ionic radius of not less than 1.6 Å and
elements having an atomic weight of not less than 130, or at least one compound containing the element (D), and then mixing them to give a solution; and
blending the resulting solution with a compound (E) which is thermally decomposed at a temperature ranging from 90 to 200°
C. and can form an amine through the thermal decomposition and whose aqueous solution and/or solution in an alcohol/water mixed solvent have a pH value falling within the range of from 6.5 to 8, at a temperature of not higher than the heat-decomposition temperature thereof.- View Dependent Claims (14, 15, 16, 17, 18)
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Specification