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PRECURSOR COMPOSITION FOR POROUS THIN FILM, METHOD FOR PREPARATION OF THE PRECURSOR COMPOSITION, POROUS THIN FILM, METHOD FOR PREPARATION OF THE POROUS THIN FILM, AND SEMICONDUCTOR DEVICE

  • US 20090186210A1
  • Filed: 05/16/2007
  • Published: 07/23/2009
  • Est. Priority Date: 06/02/2006
  • Status: Active Grant
First Claim
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1. A precursor composition for forming a porous thin film comprising at least one member selected from the group consisting of compounds (A) represented by the following general formula (1) and compounds (B) represented by the following general formula (2):


  • Si(OR1)4



    (1)
    Ra(Si)(OR2)4-a



    (2)(In the foregoing formulas (1) and (2), R1 represents a monovalent organic group;

    R represents a hydrogen atom, a fluorine atom or a monovalent organic group;

    R2 represents a monovalent organic group;

    a is an integer ranging from 1 to 3, provided that R, R1and R2 may be the same or different from one another);

    a heat decomposable organic compound (C) which undergoes heat decomposition at a temperature of not less than 250°

    C.;

    at least one element (D) selected from the group consisting of amphoteric elements having an electronegativity of not higher than 2.5, elements having an ionic radius of not less than 1.6 Å and

    elements having an atomic weight of not less than 130; and

    further a compound (E) which is thermally decomposed at a temperature ranging from 90 to 200°

    C. and can form an amine through the thermal decomposition and whose aqueous solution and/or solution in an alcohol/water mixed solvent have a pH value falling within the range of from 6.5 to 8, at a temperature of not higher than the heat-decomposition temperature thereof.

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