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SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

  • US 20090186445A1
  • Filed: 03/26/2009
  • Published: 07/23/2009
  • Est. Priority Date: 11/15/2005
  • Status: Abandoned Application
First Claim
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1. A method of manufacturing a semiconductor device including a channel formation region and a gate insulating film adjacent to the channel formation region, the method comprising:

  • forming the gate insulating film by using a microwave,wherein the channel formation region comprises an oxide semiconductor material.

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