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Organic transistor comprising a self-aligning gate electrode, and method for the production thereof

  • US 20090189147A1
  • Filed: 01/13/2005
  • Published: 07/30/2009
  • Est. Priority Date: 01/14/2004
  • Status: Abandoned Application
First Claim
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1. A method for the production of an organic transistor including a substrate with at least one unpatterned semiconductor layer on the substrate and an unpatterned insulator layer on the semiconductor layer;

  • the method comprising;

    patterning of at least the insulator layer; and

    forming at least source and drain electrode layers coupled to the semiconductor layer after the patterning of the insulator layer.

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