SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
First Claim
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1. An active matrix display device comprising:
- a first thin film transistor comprising;
a first semiconductor film comprising zinc oxide over a substrate;
a first conductive film comprising an oxide in contact with the first semiconductor film;
a first metal film in contact with the first conductive film; and
a first gate electrode adjacent to the first semiconductor film with a first gate insulating film interposed therebetween, wherein the first conductive film is between the first semiconductor film and the first metal film,an insulating film formed over the first thin film transistor;
a pixel electrode formed over the insulating film, the pixel electrode being electrically connected with the first thin film transistor through a contact hole of the insulating film;
a driver circuit operationally connected to the first thin film transistor, the driver circuit comprising a second thin film transistor formed over the substrate wherein the second thin film transistor comprises;
a second semiconductor film comprising zinc oxide over the substrate;
a second conductive film comprising an oxide in contact with the second semiconductor film;
a second metal film in contact with the second conductive film; and
a second gate electrode adjacent to the second semiconductor film with a second gate insulating film interposed therebetween, wherein the second conductive film is between the second semiconductor film and the second metal film.
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Abstract
To provide a semiconductor device in which a defect or fault is not generated and a manufacturing method thereof even if a ZnO semiconductor film is used and a ZnO film to which an n-type or p-type impurity is added is used for a source electrode and a drain electrode. The semiconductor device includes a gate insulating film formed by using a silicon oxide film or a silicon oxynitride film over a gate electrode, an Al film or an Al alloy film over the gate insulating film, a ZnO film to which an n-type or p-type impurity is added over the Al film or the Al alloy film, and a ZnO semiconductor film over the ZnO film to which an n-type or p-type impurity is added and the gate insulating film.
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Citations
55 Claims
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1. An active matrix display device comprising:
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a first thin film transistor comprising; a first semiconductor film comprising zinc oxide over a substrate; a first conductive film comprising an oxide in contact with the first semiconductor film; a first metal film in contact with the first conductive film; and a first gate electrode adjacent to the first semiconductor film with a first gate insulating film interposed therebetween, wherein the first conductive film is between the first semiconductor film and the first metal film, an insulating film formed over the first thin film transistor; a pixel electrode formed over the insulating film, the pixel electrode being electrically connected with the first thin film transistor through a contact hole of the insulating film; a driver circuit operationally connected to the first thin film transistor, the driver circuit comprising a second thin film transistor formed over the substrate wherein the second thin film transistor comprises; a second semiconductor film comprising zinc oxide over the substrate; a second conductive film comprising an oxide in contact with the second semiconductor film; a second metal film in contact with the second conductive film; and a second gate electrode adjacent to the second semiconductor film with a second gate insulating film interposed therebetween, wherein the second conductive film is between the second semiconductor film and the second metal film. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 13, 51)
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11. An active matrix display device comprising:
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a first thin film transistor comprising; a first metal film over a substrate; a first conductive film comprising an oxide on and in contact with the first metal film; a first semiconductor film comprising zinc oxide on and in contact with the first conductive film; and a first gate electrode adjacent to the first semiconductor film with a first gate insulating film interposed therebetween, an insulating film formed over the first thin film transistor; a pixel electrode formed over the insulating film, the pixel electrode being electrically connected with the first thin film transistor through a contact hole of the insulating film; a driver circuit operationally connected to the first thin film transistor, the driver circuit comprising a second thin film transistor formed over the substrate wherein the second thin film transistor comprises; a second metal film over the substrate; a second conductive film comprising an oxide on and in contact with the first metal film; a second semiconductor film comprising zinc oxide on and in contact with the second conductive film; and a second gate electrode adjacent to the second semiconductor film with a second gate insulating film interposed therebetween. - View Dependent Claims (12, 14, 15, 16, 17, 18, 19, 20, 52)
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21. An active matrix display device comprising:
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a first thin film transistor comprising; a first gate electrode over a substrate; a first semiconductor film comprising zinc oxide over the first gate electrode with a first gate insulating film interposed therebetween; a first conductive film comprising an oxide in contact with the first semiconductor film; and a first metal film in contact with the first conductive film, wherein the first conductive film is between the first semiconductor film and the first metal film, an insulating film formed over the first thin film transistor; a pixel electrode formed over the insulating film, the pixel electrode being electrically connected with the first thin film transistor through a contact hole of the insulating film; a driver circuit operationally connected to the first thin film transistor, the driver circuit comprising a second thin film transistor formed over the substrate wherein the second thin film transistor comprises; a second gate electrode over the substrate; a second semiconductor film comprising zinc oxide over the second gate electrode with a second gate insulating film interposed therebetween; a second conductive film comprising an oxide in contact with the second semiconductor film; and a second metal film in contact with the second conductive film, wherein the second conductive film is between the second semiconductor film and the second metal film. - View Dependent Claims (22, 23, 24, 25, 26, 27, 28, 29, 30, 53)
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31. An active matrix display device comprising:
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a first thin film transistor comprising; a first gate electrode over a substrate; a first gate insulating film over the first gate electrode; a first metal film over the first gate insulating film; a first conductive film comprising an oxide on and in contact with the first metal film; and a first semiconductor film comprising zinc oxide on and in contact with the first conductive film and the first gate insulating film; an insulating film formed over the first thin film transistor; a pixel electrode formed over the insulating film, the pixel electrode being electrically connected with the first thin film transistor through a contact hole of the insulating film; a driver circuit operationally connected to the first thin film transistor, the driver circuit comprising a second thin film transistor formed over the substrate wherein the second thin film transistor comprises; a second gate electrode over the substrate; a second gate insulating film over the second gate electrode; a second metal film over the second gate insulating film; a second conductive film comprising an oxide on and in contact with the second metal film; and a second semiconductor film comprising zinc oxide on and in contact with the second conductive film and the second gate insulating film. - View Dependent Claims (32, 33, 34, 35, 36, 37, 38, 39, 40, 54)
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41. An active matrix display device comprising:
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a first thin film transistor comprising; a first gate electrode over a substrate; a first gate insulating film over the first gate electrode; a first metal film over the substrate; a first conductive film comprising an oxide on and in contact with the first metal film; a first semiconductor film comprising zinc oxide on and in contact with the first conductive film and the first gate insulating film; and an organic resin film on and in contact with the first semiconductor film, an insulating film formed over the first thin film transistor; a pixel electrode formed over the insulating film, the pixel electrode being electrically connected with the first thin film transistor through a contact hole of the insulating film; a driver circuit operationally connected to the first thin film transistor, the driver circuit comprising a second thin film transistor formed over the substrate wherein the second thin film transistor comprises; a second gate electrode over the substrate; a second gate insulating film over the second gate electrode; a second metal film over the substrate; a second conductive film comprising an oxide on and in contact with the second metal film; a second semiconductor film comprising zinc oxide on and in contact with the second conductive film and the second gate insulating film; and an organic resin film on and in contact with the second semiconductor film. - View Dependent Claims (42, 43, 44, 45, 46, 47, 48, 49, 50, 55)
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Specification
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Current AssigneeSemiconductor Energy Laboratory Co., Ltd.
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Original AssigneeSemiconductor Energy Laboratory Co., Ltd.
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InventorsAKIMOTO, Kengo
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Application NumberUS12/417,677Publication NumberTime in Patent OfficeDaysField of SearchUS Class Current257/43CPC Class CodesH01L 27/1214 comprising a plurality of T...H01L 27/1225 with semiconductor material...H01L 27/1255 integrated with passive dev...H01L 29/41733 for thin film transistors w...H01L 29/45 Ohmic electrodesH01L 29/4908 for thin film semiconductor...H01L 29/78621 with LDD structure or an ex...H01L 29/7869 having a semiconductor body...
