SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

• US 20090189156A1
• Filed: 04/03/2009
• Published: 07/30/2009
• Est. Priority Date: 11/15/2005
• Status: Active Grant

• Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: AKIMOTO, Kengo
• Granted Patent: US 8,525,165 B2
• Time in Patent Office: Days
• US Class Current: 257/43
• CPC Class Codes: H01L 27/1214 comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
• CPC Class Codes: H01L 27/1225 with semiconductor materials not belonging to the group IV of the periodic table, e.g. InGaZnO
• CPC Class Codes: H01L 27/1255 integrated with passive devices, e.g. auxiliary capacitors
• CPC Class Codes: H01L 29/41733 for thin film transistors with insulated gate
• CPC Class Codes: H01L 29/45 Ohmic electrodes
• CPC Class Codes: H01L 29/4908 for thin film semiconductor, e.g. gate of TFT
• CPC Class Codes: H01L 29/78621 with LDD structure or an extension or an offset region or characterised by the doping profile
• CPC Class Codes: H01L 29/7869 having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate

Abstract

To provide a semiconductor device in which a defect or fault is not generated and a manufacturing method thereof even if a ZnO semiconductor film is used and a ZnO film to which an n-type or p-type impurity is added is used for a source electrode and a drain electrode. The semiconductor device includes a gate insulating film formed by using a silicon oxide film or a silicon oxynitride film over a gate electrode, an Al film or an Al alloy film over the gate insulating film, a ZnO film to which an n-type or p-type impurity is added over the Al film or the Al alloy film, and a ZnO semiconductor film over the ZnO film to which an n-type or p-type impurity is added and the gate insulating film.

Claims

1. An active matrix display device comprising:

a thin film transistor over a substrate, the thin film transistor comprising;

a gate electrode;

a semiconductor film comprising zinc oxide over the gate electrode with a gate insulating film interposed therebetween;

an insulating film comprising a resin material on the semiconductor film; and

a pixel electrode formed over the insulating film and electrically connected to the thin film transistor.

2. The active matrix display device according to claim 1, wherein the gate insulating film comprises silicon oxide or silicon oxynitride.

3. The active matrix display device according to claim 1,

wherein the insulating film comprising the resin material is formed by coating.

4. The active matrix display device according to claim 1,

wherein the active matrix display device is an EL display device.

5. The active matrix display device according to claim 1,

wherein the active matrix display device is a liquid crystal display device.

6. A television receiver including the active matrix display device according to claim 1.

7. An active matrix display device comprising:

a thin film transistor over a substrate, the thin film transistor comprising;

a gate electrode;

a semiconductor film comprising zinc oxide over the gate electrode with a gate insulating film interposed therebetween;

a conductive film comprising an oxide in contact with the semiconductor film; and

a metal film in contact with the conductive film;

an insulating film comprising a resin material on the semiconductor film; and

a pixel electrode over the insulating film and electrically connected to the thin film transistor,

wherein the conductive film is between the semiconductor film and the metal film.

8. The active matrix display device according to claim 7, wherein the metal film is aluminum film or aluminum alloy film.

9. The active matrix display device according to claim 7,

wherein the conductive film comprises zinc oxide.

10. The active matrix display device according to claim 7,

wherein the metal film is a Ti film.

11. The active matrix display device according to claim 7,

wherein the metal film includes a first metal layer comprising aluminum and a second metal layer comprising titanium wherein the second metal layer is in contact with the conductive film.

12. The active matrix display device according to claim 7, wherein the gate insulating film comprises silicon oxide or silicon oxynitride.

13. The active matrix display device according to claim 7,

wherein the insulating film comprising the resin material is formed by coating.

14. The active matrix display device according to claim 7,

wherein the active matrix display device is an EL display device.

15. The active matrix display device according to claim 7,

wherein the active matrix display device is a liquid crystal display device.

16. A television receiver including the active matrix display device according to claim 7.

17. An active matrix display device comprising:

a thin film transistor over a substrate, the thin film transistor comprising;

a gate electrode over the substrate;

a gate insulating film over the gate electrode;

a metal film over the substrate;

a conductive film comprising an oxide on and in contact with the metal film; and

a semiconductor film comprising zinc oxide on and in contact with the conductive film and the gate insulating film;

an insulating film comprising a resin material on the semiconductor film; and

a pixel electrode over the insulating film and electrically connected to the thin film transistor.

18. The active matrix display device according to claim 17, wherein the metal film is aluminum film or aluminum alloy film.

19. The active matrix display device according to claim 17,

wherein the conductive film comprises zinc oxide.

20. The active matrix display device according to claim 17,

wherein the metal film is a Ti film.

21. The active matrix display device according to claim 17.

wherein the metal film includes a first metal layer comprising aluminum and a second metal layer comprising titanium wherein the second metal layer is in contact with the conductive film.

22. The active matrix display device according to claim 17, wherein the gate insulating film comprises silicon oxide or silicon oxynitride.

23. The active matrix display device according to claim 17,

wherein the insulating film comprising the resin material is formed by coating.

24. The active matrix display device according to claim 17,

wherein the active matrix display device is an EL display device.

25. The active matrix display device according to claim 17,

wherein the active matrix display device is a liquid crystal display device.

26. A television receiver including the active matrix display device according to claim 17.