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INWARD DIELECTRIC SPACERS FOR REPLACEMENT GATE INTEGRATION SCHEME

  • US 20090189201A1
  • Filed: 01/24/2008
  • Published: 07/30/2009
  • Est. Priority Date: 01/24/2008
  • Status: Abandoned Application
First Claim
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1. A method for fabricating a semiconductor device, comprising:

  • providing a substrate having thereon a placeholder gate electrode disposed in a dielectric layer;

    removing said placeholder gate electrode to form a trench in said dielectric layer;

    forming a pair of dielectric spacers adjacent to the sidewalls of said trench, wherein said trench has a re-entrant profile, and wherein each dielectric spacer of said pair of dielectric spacers has a tapered profile; and

    forming a gate electrode in said trench and adjacent to said pair of dielectric spacers.

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