INWARD DIELECTRIC SPACERS FOR REPLACEMENT GATE INTEGRATION SCHEME

• US 20090189201A1
• Filed: 01/24/2008
• Published: 07/30/2009
• Est. Priority Date: 01/24/2008
• Status: Abandoned Application

• Current Assignee: Applied Materials Incorporated
• Original Assignee: Applied Materials Incorporated
• Inventors: Wood, Bingxi Sun, Chang, Chorng-Ping
• Application Number:
  US12/019,538
• Publication Number:
  US 20090189201A1
• Time in Patent Office: Days
• US Class Current: 257/288
• CPC Class Codes: H01L 29/66545 using a dummy, i.e. replacement gate in a process wherein at least a part of the final gate is self aligned to the dummy gate
• CPC Class Codes: H01L 29/66553 using inside spacers, permanent or not
• CPC Class Codes: H01L 29/6656 using multiple spacer layers, e.g. multiple sidewall spacers

Abstract

Inward dielectric spacers for a replacement gate integration scheme are described. A semiconductor device is fabricated by first providing a substrate having thereon a placeholder gate electrode disposed in a dielectric layer. The placeholder gate electrode is removed to from a trench in the dielectric layer. A pair of dielectric spacers is then formed adjacent to the sidewalls of the trench. Finally, a gate electrode is formed in the trench and adjacent to the pair of dielectric layers.

Claims

1. A method for fabricating a semiconductor device, comprising:

providing a substrate having thereon a placeholder gate electrode disposed in a dielectric layer;

removing said placeholder gate electrode to form a trench in said dielectric layer;

forming a pair of dielectric spacers adjacent to the sidewalls of said trench, wherein said trench has a re-entrant profile, and wherein each dielectric spacer of said pair of dielectric spacers has a tapered profile; and

forming a gate electrode in said trench and adjacent to said pair of dielectric spacers.

2. The method of claim 1, wherein the top portion of each dielectric spacer of said pair of dielectric spacers is flared to form a funnel-shaped opening in said trench.

3. The method of claim 2, wherein forming said gate electrode comprises depositing a metal-containing layer in said funnel-shaped opening by a physical vapor deposition process.

4. The method of claim 1, wherein said pair of dielectric spacers comprises a material having a dielectric constant approximately in the range of 2.2-3.5.

5. The method of claim 4, wherein said pair of dielectric spacers is formed at a temperature less than approximately 600 degrees Celsius.

6. The method of claim 4, wherein said pair of dielectric spacers comprises a material selected from the group consisting of carbon-doped silicon oxide, boron-doped silicon oxide and boron-doped silicon nitride.

7. The method of claim 1, wherein each dielectric spacer of said pair of dielectric spacers has a mid-height width approximately in the range of 5 nanometers-15 nanometers, and wherein said gate electrode has a bottom width approximately in the range of 20 nanometers-50 nanometers.

8. The method of claim 1, wherein said pair of dielectric spacers reduces the mid-height width of said trench by a factor approximately in the range of 20%-35%.

9. A semiconductor device, comprising:

a substrate having thereon a gate electrode disposed in a dielectric layer;

a pair of source and drain regions in said substrate on either side of said gate electrode; and

a pair of dielectric spacers adjacent to the sidewalls of said gate electrode, wherein each dielectric spacer is between said gate electrode and said dielectric layer, wherein the top portion of each dielectric spacer of said pair of dielectric spacers is flared to form a funnel shape, wherein the portions of said dielectric layer adjacent to said pair of dielectric spacers have a re-entrant profile, and wherein each dielectric spacer of said pair of dielectric spacers has a tapered profile.

10. The semiconductor device of claim 9, wherein said pair of dielectric spacers comprises a material having a dielectric constant approximately in the range of 2.2-3.5.

11. The semiconductor device of claim 10, wherein said pair of dielectric spacers comprises a material selected from the group consisting of carbon-doped silicon oxide, boron-doped silicon oxide and boron-doped silicon nitride.

12. The semiconductor device of claim 9, wherein each spacer of said pair of dielectric spacers has a mid-height width approximately in the range of 10%-30% of the mid-height width of said gate electrode.

13. The semiconductor device of claim 9, further comprising:

a gate dielectric layer disposed between said substrate and said gate electrode, wherein a portion of said gate dielectric layer is underneath said pair of dielectric spacers.

14. The semiconductor device of claim 9, further comprising:

a gate dielectric layer disposed between said substrate and said gate electrode, wherein a portion of said gate dielectric layer is adjacent to the sidewalls of said pair of dielectric spacers.

15. A semiconductor device, comprising:

a substrate having thereon a gate electrode disposed in a dielectric layer;

a pair of source and drain regions in said substrate on either side of said gate electrode; and

a pair of dielectric spacers adjacent to the sidewalls of said gate electrode, wherein each dielectric spacer is between said gate electrode and said dielectric layer, and wherein said pair of dielectric spacers comprises a material having a dielectric constant approximately in the range of 2.2-3.5.

16. The semiconductor device of claim 15, wherein the portions of said dielectric layer adjacent to said pair of dielectric spacers have a re-entrant profile, and wherein each dielectric spacer of said pair of dielectric spacers has a tapered profile.

17. The semiconductor device of claim 15, wherein each spacer of said pair of dielectric spacers has a mid-height width approximately in the range of 10%-30% of the mid-height width of said gate electrode.

18. The semiconductor device of claim 15, wherein said pair of dielectric spacers comprises a material selected from the group consisting of carbon-doped silicon oxide, boron-doped silicon oxide and boron-doped silicon nitride.

19. The semiconductor device of claim 15, further comprising:

a gate dielectric layer disposed between said substrate and said gate electrode, wherein a portion of said gate dielectric layer is underneath said pair of dielectric spacers.

20. The semiconductor device of claim 15, further comprising:

a gate dielectric layer disposed between said substrate and said gate electrode, wherein a portion of said gate dielectric layer is adjacent to the sidewalls of said pair of dielectric spacers.