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METHOD OF FORMING TRENCH ISOLATION STRUCTURES AND SEMICONDUCTOR DEVICE PRODUCED THEREBY

  • US 20090189246A1
  • Filed: 07/23/2008
  • Published: 07/30/2009
  • Est. Priority Date: 01/30/2008
  • Status: Abandoned Application
First Claim
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1. A method for forming a trench isolation structure comprising:

  • forming a patterned mask on a semiconductor substrate;

    defining a trench with a predetermined depth D by using the patterned mask, wherein the trench has a bottom and a side wall;

    forming a liner layer covering the bottom and the side wall of the trench;

    substantially filling the trench with a flowable oxide from the bottom to a thickness d1 to form an oxide layer;

    forming a barrier layer with a thickness d′

    to cover the surface of the oxide layer and completely seal the oxide layer, wherein d′

    <

    d1 and d1+d′



    1/2D;

    forming an insulating layer to fill the trench; and

    conducting a planarization process wherein the patterned mask is used as a stop layer.

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