NOBLE METAL CAP FOR INTERCONNECT STRUCTURES
First Claim
1. An interconnect structure comprising:
- a dielectric material having a dielectric constant of about 3.0 or less, said dielectric material having a hydrophobic surface layer and at least one conductive material having an upper surface embedded within said dielectric material; and
a noble metal cap located directly on said upper surface of said at least one conductive material, said noble metal cap does not substantially extend onto said hydrophobic surface layer of said dielectric material that is adjacent to said at least one conductive material and no noble metal residues are present on the hydrophobic surface layer of said dielectric material.
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Accused Products
Abstract
An interconnect structure that includes a dielectric material having a dielectric constant of about 3.0 or less is provided. This low k dielectric material has at least one conductive material having an upper surface embedded therein. The dielectric material also has a surface layer that is made hydrophobic prior to the formation of the noble metal cap. The noble metal cap is located directly on the upper surface of the at least one conductive material. Because of the presence of the hydrophobic surface layer on the dielectric material, the noble metal cap does not substantially extend onto the hydrophobic surface layer of the dielectric material that is adjacent to the at least one conductive material and no metal residues from the noble metal cap deposition form on this hydrophobic dielectric surface.
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Citations
25 Claims
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1. An interconnect structure comprising:
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a dielectric material having a dielectric constant of about 3.0 or less, said dielectric material having a hydrophobic surface layer and at least one conductive material having an upper surface embedded within said dielectric material; and a noble metal cap located directly on said upper surface of said at least one conductive material, said noble metal cap does not substantially extend onto said hydrophobic surface layer of said dielectric material that is adjacent to said at least one conductive material and no noble metal residues are present on the hydrophobic surface layer of said dielectric material. - View Dependent Claims (2, 3, 4, 5)
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6. An interconnect structure comprising:
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a dielectric material having a dielectric constant of about 3.0 or less, said dielectric material having a hydrophobic surface layer and at least one Cu-containing conductive material having an upper surface embedded within said dielectric material; and a Ru-containing noble metal cap located directly on said upper surface of said at least one Cu-containing conductive material, said Ru-containing noble metal cap does not substantially extend onto said hydrophobic surface layer of said dielectric material that is adjacent to said at least one Cu-containing conductive material and no Ru-containing noble metal residues are present on the hydrophobic surface layer of said dielectric material. - View Dependent Claims (7, 8)
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9. A method of forming an interconnect structure comprising:
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providing a dielectric material having a dielectric constant of about 3.0 or less, said dielectric material having at least one conductive material having an upper surface embedded within said dielectric material; forming a hydrophobic surface layer on exposed surfaces of the dielectric material; and forming a noble metal cap directly on said upper surface of said at least one conductive material, said noble metal cap does not substantially extend onto said hydrophobic surface layer of said dielectric material that is adjacent to said at least one conductive material, said noble metal cap forming does not result in noble metal residues on the hydrophobic surface layer of said dielectric material. - View Dependent Claims (10, 11, 12, 13, 14, 15, 16, 17, 18, 19)
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20. A method of fabricating an interconnect structure comprising:
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providing a dielectric material having a dielectric constant of about 3.0 or less, said dielectric material having at least one conductive material having an upper surface embedded within said dielectric material; forming a hydrophobic surface layer on exposed surfaces of the dielectric material by thermal treating in a hydrogen-containing ambient; and forming a noble metal cap directly on said upper surface of said at least one conductive material, said noble metal cap does not substantially extend onto said hydrophobic surface layer of said dielectric material that is adjacent to said at least one conductive material, said noble metal cap forming does not result in noble metal residues on the hydrophobic surface layer of said dielectric material. - View Dependent Claims (21, 22, 23, 24, 25)
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Specification