Component for semicondutor processing apparatus and manufacturing method thereof

• US 20090194233A1
• Filed: 06/23/2006
• Published: 08/06/2009
• Est. Priority Date: 06/23/2005
• Status: Abandoned Application

• Current Assignee: Tokyo Electron Limited
• Original Assignee: Tokyo Electron Limited
• Inventors: Hayashi, Teruyuki, Tamura, Akitake, Dobashi, Kazuya
• Application Number:
  US11/663,182
• Publication Number:
  US 20090194233A1
• Time in Patent Office: Days
• US Class Current: 156/345.1
• CPC Class Codes: C23C 16/403 of aluminium, magnesium or beryllium
• CPC Class Codes: C23C 16/405 of refractory metals or yttrium
• CPC Class Codes: C23C 16/4404 Coatings or surface treatment on the inside of the reaction chamber or on parts thereof
• CPC Class Codes: C23C 16/4412 Details relating to the exhausts, e.g. pumps, filters, scrubbers, particle traps
• CPC Class Codes: C23C 16/45525 Atomic layer deposition [ALD]
• CPC Class Codes: C23C 16/45561 Gas plumbing upstream of the reaction chamber
• CPC Class Codes: Y10T 428/265 1 mil or less

Abstract

A component (10) for a semiconductor processing apparatus includes a matrix (10a) defining a shape of the component, and a protection film (10c) covering a predetermined surface of the matrix. The protection film (10c) consists essentially of an amorphous oxide of a first element selected from the group consisting of aluminum, silicon, hafnium, zirconium, and yttrium. The protection film (10c) has a porosity of less than 1% and a thickness of 1 nm to 10 μm.

Claims

1. A component for a semiconductor processing apparatus, the component comprising:

a matrix defining a shape of the component; and

a protection film covering a predetermined surface of the matrix,

wherein the protection film consists essentially of an amorphous oxide of a first element selected from the group consisting of aluminum, silicon, hafnium, zirconium, and yttrium, and has a porosity of less than 1% and a thickness of 1 nm to 10 μ

m.

2. The component according to claim 1, wherein the protection film is a film formed by alternately supplying a first source gas containing the first element and a second source gas containing an oxidation gas, thereby laminating layers formed by CVD (Chemical Vapor Deposition) and having a thickness of an atomic or molecular level.

3. The component according to claim 1, further comprising an underlying film interposed between the predetermined surface and the protection film, and consisting essentially of an oxide of a second element.

4. The component according to claim 3, wherein the underlying film is a film formed by thermal spray.

5. The component according to claim 3, wherein the second element is selected from the group consisting of boron, magnesium, aluminum, silicon, gallium, chromium, yttrium, zirconium, germanium, tantalum, and neodymium.

6. The component according to claim 1, further comprising a covering film covering the protection film, and consisting essentially of an oxide of a third element.

7. The component according to claim 6, wherein the covering film is a film formed by thermal spray.

8. The component according to claim 6, wherein the third element is selected from the group consisting of aluminum, silicon, hafnium, zirconium, and yttrium.

9. The component according to claim 6, wherein the predetermined surface is a surface treated by a surface roughening process.

10. The component according to claim 1, wherein the matrix comprises a material selected from the group consisting of aluminum and stainless steel.

11. The component according to claim 1, wherein the matrix defines a shape of a member selected from the group consisting of a sidewall of a process chamber, a manifold that forms a bottom of a process chamber, a deposition shield that covers an internal surface of a process chamber, a focus ring, a gas supply line, and an exhaust line.

12. A method for manufacturing a component used for a semiconductor processing apparatus, the method comprising:

preparing a matrix defining a shape of the component; and

forming a protection film covering a predetermined surface of the matrix,

wherein said forming a protection film comprises alternately supplying a first source gas containing a first element and a second source gas containing an oxidation gas, thereby laminating layers formed by CVD (Chemical Vapor Deposition) and having a thickness of an atomic or molecular level, and wherein the first element is selected from the group consisting of aluminum, silicon, hafnium, zirconium, and yttrium.

13. The manufacturing method according to claim 12, wherein the protection film consists essentially of an amorphous oxide of the first element, and has a porosity of less than 1% and a thickness of 1 nm to 10 μ

m.

14. The manufacturing method according to claim 12, wherein the matrix comprises a material selected from the group consisting of aluminum and stainless steel.

15. The manufacturing method according to claim 12, wherein an underlying film is interposed between the predetermined surface and the protection film, and consists essentially of an oxide of a second element selected from the group consisting of boron, magnesium, aluminum, silicon, gallium, chromium, yttrium, zirconium, germanium, tantalum, and neodymium.

16. The manufacturing method according to claim 12, wherein the method further comprises forming a covering film by thermal spray to cover the protection film, the covering film consisting essentially of an oxide of a third element.

17. The manufacturing method according to claim 16, wherein the third element is selected from the group consisting of aluminum, silicon, hafnium, zirconium, and yttrium.

18. The manufacturing method according to claim 16, wherein the method further comprises performing a surface roughening process on the predetermined surface.

19. A semiconductor processing apparatus comprising:

a process container having a process field configured to accommodate a target substrate;

a support member configured to support the target substrate within the process field;

an exhaust system configured to exhaust the process field; and

a gas supply system configured to supply a process gas into the process field,

wherein a component forming a part of one of the process field, the exhaust system, and the gas supply system comprises

a matrix defining a shape of the component, and

a protection film covering a predetermined surface of the matrix, and

wherein the protection film consists essentially of an amorphous oxide of an element selected from the group consisting of aluminum, silicon, hafnium, zirconium, and yttrium, and has a porosity of less than 1% and a thickness of 1 nm to 10 μ

m.

20. The semiconductor processing apparatus according to claim 19, further comprising a covering film covering the protection film, and consisting essentially of an oxide of an element selected from the group consisting of aluminum, silicon, hafnium, zirconium, and yttrium.