CONDUCTIVE OXIDE-DEPOSITED SUBSTRATE AND METHOD FOR PRODUCING THE SAME, AND MIS LAMINATED STRUCTURE AND METHOD FOR PRODUCING THE SAME

• US 20090194767A1
• Filed: 01/30/2009
• Published: 08/06/2009
• Est. Priority Date: 02/01/2008
• Status: Active Grant

• Current Assignee: Ricoh Company Limited
• Original Assignee: Ricoh Company Limited
• Inventors: MIURA, Hiroshi, Takeuchi, Kohji, Toyoshima, Nobuaki
• Granted Patent: US 8,039,405 B2
• Time in Patent Office: Days
• US Class Current: 257/43
• CPC Class Codes: H01L 21/32134 by liquid etching only
• CPC Class Codes: H01L 29/4908 for thin film semiconductor, e.g. gate of TFT
• CPC Class Codes: H01L 29/78603 characterised by the insulating substrate or support H01L29/78657 takes precedence
• CPC Class Codes: H01L 29/7869 having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
• CPC Class Codes: H01L 31/02008 for solar cells or solar cell modules
• CPC Class Codes: H01L 31/022466 made of transparent conductive layers, e.g. TCO, ITO layers
• CPC Class Codes: H01L 31/022475 composed of indium tin oxide [ITO]
• CPC Class Codes: H01L 31/1884 Manufacture of transparent electrodes, e.g. TCO, ITO
• CPC Class Codes: Y02E 10/50 Photovoltaic [PV] energy
• CPC Class Codes: Y10T 428/24628 Nonplanar uniform thickness material

Abstract

A method for producing a conductive oxide-deposited substrate including depositing a conductive oxide thin film over a substrate, subjecting the conductive oxide thin film to heat treatment by irradiating with a condensed laser beam so as to be thermally changed in part, and subjecting the conductive oxide thin film to etching treatment so as to remove a part which has not been thermally changed, wherein the conductive oxide thin film absorbs the laser beam, and at least a part of the conductive oxide thin film is an amorphous phase.

Claims

1. A method for producing a conductive oxide-deposited substrate comprising:

depositing a conductive oxide thin film over a substrate;

subjecting the conductive oxide thin film to heat treatment by irradiating with a condensed laser beam so as to be thermally changed in part; and

subjecting the conductive oxide thin film to etching treatment so as to remove a part which has not been thermally changed,

wherein the conductive oxide thin film absorbs the laser beam, and at least a part of the conductive oxide thin film is an amorphous phase.

2. The method for producing a conductive oxide-deposited substrate according to claim 1, wherein the heat treatment comprises irradiating a laminate consisting of the substrate and the conductive oxide thin film, which is obtained in the film deposition with a laser beam, while the laminate is being rotated.

3. The method for producing a conductive oxide-deposited substrate according to claim 1, further comprising depositing another film after the etching treatment.

4. The method for producing a conductive oxide-deposited substrate according to claim 1, wherein the condensed laser beam is a semiconductor laser beam having the wavelength of 360 nm to 420 nm.

5. A conductive oxide-deposited substrate produced by a method for producing a conductive oxide-deposited substrate comprising:

depositing a conductive oxide thin film over a substrate;

subjecting the conductive oxide thin film to heat treatment by irradiating with a condensed laser beam so as to be thermally changed in part; and

subjecting the conductive oxide thin film to etching treatment so as to remove a part which has not been thermally changed,

wherein the conductive oxide thin film absorbs the laser beam, and at least a part of the conductive oxide thin film is an amorphous phase, and

wherein a convex-shaped structure of the conductive oxide is formed on at least one surface of the substrate.

6. The conductive oxide-deposited substrate according to claim 5, wherein the conductive oxide-deposited substrate comprises a plurality of the convex-shaped structures on the substrate, and the convex-shaped structures are arranged at a pitch of 200 nm to 500 nm on the substrate.

7. A MIS laminated structure comprising:

a supporting substrate; and

a semiconductor material layer S, an insulating material layer I, and a conductive oxide material layer M are deposited in this order over the supporting substrate so as to form the MIS laminated structure,

wherein the MIS laminated structure is produced by a method for producing a MIS laminated structure by laser beam irradiation and etching treatment, comprising;

depositing a semiconductor material layer S, an insulating material layer I, and a conductive oxide material layer M in this order over the supporting substrate so as to form the MIS laminated structure;

subjecting the MIS laminated structure to heat treatment by irradiating with a condensed laser beam from the conductive oxide material layer side so as to thermally change a part of the conductive oxide material layer, and to thermally change a part of the semiconductor material layer by heat spread in the MIS laminated structure; and

subjecting the MIS laminated structure to etching treatment so as to remove a part which has not been thermally changed,

wherein the conductive oxide thin film absorbs the laser beam, and at least a part of the conductive oxide thin film is an amorphous phase.

8. The MIS laminated structure according to claim 7, wherein the semiconductor material layer S comprises a material selected from In₂O₃, SnO₂ and ZnO.

9. The MIS laminated structure according to claim 7, wherein a processed part of the MIS laminated structure is circle or elliptical shape.