GROUP-III NITRIDE COMPOUND SEMICONDUCTOR DEVICE AND PRODUCTION METHOD THEREOF, GROUP-III NITRIDE COMPOUND SEMICONDUCTOR LIGHT-EMITTING DEVICE AND PRODUCTION METHOD THEREOF, AND LAMP

• US 20090194784A1
• Filed: 01/15/2008
• Published: 08/06/2009
• Est. Priority Date: 01/16/2007
• Status: Abandoned Application

• Current Assignee: Showa Denko KK
• Original Assignee: Showa Denko KK
• Inventors: Yokoyama, Yasunori, Sakai, Hiromitsu, Kaji, Hiroaki
• Application Number:
  US12/306,609
• Publication Number:
  US 20090194784A1
• Time in Patent Office: Days
• US Class Current: 257/103
• CPC Class Codes: B82Y 20/00 Nanooptics, e.g. quantum optics or photonic crystals
• CPC Class Codes: C23C 14/0617 AIII BV compounds, where A is Al, Ga, In or Tl and B is N, P, As, Sb or Bi
• CPC Class Codes: C23C 14/0641 Nitrides C23C14/0617 takes precedence
• CPC Class Codes: C23C 16/303 Nitrides
• CPC Class Codes: C23C 16/34 Nitrides C23C16/303 takes precedence
• CPC Class Codes: H01L 21/0237 Materials
• CPC Class Codes: H01L 21/0242 Crystalline insulating materials
• CPC Class Codes: H01L 21/02433 Crystal orientation
• CPC Class Codes: H01L 21/02458 Nitrides
• CPC Class Codes: H01L 21/0254 Nitrides
• CPC Class Codes: H01L 21/02576 N-type
• CPC Class Codes: H01L 21/02579 P-type
• CPC Class Codes: H01L 21/0262 Reduction or decomposition of gaseous compounds, e.g. CVD
• CPC Class Codes: H01L 21/02631 Physical deposition at reduced pressure, e.g. MBE, sputtering, evaporation
• CPC Class Codes: H01L 2224/32245 the item being metallic
• CPC Class Codes: H01L 2224/45144 Gold (Au) as principal constituent
• CPC Class Codes: H01L 2224/48091 Arched
• CPC Class Codes: H01L 2224/48247 connecting the wire to a bond pad of the item
• CPC Class Codes: H01L 2224/48257 connecting the wire to a die pad of the item
• CPC Class Codes: H01L 2224/49107 on the semiconductor or solid-state body
• CPC Class Codes: H01L 2224/73265 : Layer and wire connectors
• CPC Class Codes: H01L 2924/00 : Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/00012 : Relevant to the scope of the group, the symbol of which is combined with the symbol of this group
• CPC Class Codes: H01L 2924/00014 : the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 2924/181 : Encapsulation
• CPC Class Codes: H01L 33/007 : comprising nitride compounds
• CPC Class Codes: H01L 33/12 : with a stress relaxation structure, e.g. buffer layer
• CPC Class Codes: H01L 33/16 : with a particular crystal structure or orientation, e.g. polycrystalline, amorphous or porous
• CPC Class Codes: H01S 5/0213 : Sapphire, quartz or diamond based substrates
• CPC Class Codes: H01S 5/32025 : non-polar orientation
• CPC Class Codes: H01S 5/34333 : with a well layer based on Ga(In)N or Ga(In)P, e.g. blue laser

Abstract

A group-III nitride compound semiconductor device of the present invention comprises a substrate, an intermediate layer provided on the substrate, and a base layer provided on the intermediate layer in which a full width at half maximum in rocking curve of a (0002) plane is 100 arcsec or lower and a full width at half maximum in rocking curve of a (10-10) plane is 300 arcsec or lower. Also, a production method of a group-III nitride compound semiconductor device of the present invention comprises forming the intermediate layer by using a sputtering method.

Claims

1. A group-III nitride compound semiconductor device, comprising:

a substrate,

an intermediate layer provided on said substrate, and

a base layer provided on said intermediate layer, in which a full width at half maximum in rocking curve of a (0002) plane is 100 arcsec or lower, and a full width at half maximum in rocking curve of a (10-10) plane is 300 arcsec or lower.

2. The group-III nitride compound semiconductor device according to claim 1, wherein the full width at half maximum in rocking curve of said (0002) plane is 50 arcsec or lower and the full width at half maximum in rocking curve of said (10-10) plane is 250 arcsec or lower.

3. The group-III nitride compound semiconductor device according to claim 1, wherein said substrate is sapphire.

4. The group-III nitride compound semiconductor device according to claim 3, wherein said intermediate layer is formed on a c-plane of said sapphire substrate.

5. The group-III nitride compound semiconductor device according to claim 1, wherein said intermediate layer is formed of Al_xGa_1-xN (0≦

x≦

1).

6. The group-III nitride compound semiconductor device according to claim 1, wherein said intermediate layer is formed of AlN.

7. The group-III nitride compound semiconductor device according to claim 1, wherein said base layer is formed of AlGaN.

8. The group-III nitride compound semiconductor device according to claim 1, wherein said base layer is formed of GaN.

9. A group-III nitride compound semiconductor light-emitting device, comprising a group-III nitride compound semiconductor device according to claim 1, and a semiconductor layer prepared by sequentially laminating an n-type semiconductor layer, a light-emitting layer and a p-type semiconductor layer, wherein

said semiconductor layer is formed on said base layer of said group-III nitride compound semiconductor device.

10. The group-III nitride compound semiconductor light-emitting device according to claim 9, wherein said n-type semiconductor layer comprises an n-type cladding layer, said p-type semiconductor layer comprises a p-type cladding layer, and said n-type cladding layer and/or said p-type cladding layer comprises at least a superlattice structure.

11. A production method of a group-III nitride compound semiconductor device according to claim 1, said method comprising:

forming said intermediate layer by using a sputtering method.

12. The production method of a group-III nitride compound semiconductor device according to claim 11, further comprising forming said base layer by using a MOCVD method.

13. A production method of a group-III nitride compound semiconductor light-emitting device, said method comprising:

forming a semiconductor layer by sequentially laminating an n-type semiconductor layer, a light-emitting layer and a p-type semiconductor layer on top of said base layer of a group-III nitride compound semiconductor device according to claim 1, and

forming said intermediate layer by using a sputtering method.

14. The production method of a group-III nitride compound semiconductor light-emitting device according to claim 13, further comprising forming said base layer by using a MOCVD method.

15. A group-III nitride compound semiconductor device produced by the production method according to claim 11.

16. A group-III nitride compound semiconductor light-emitting device produced by the production method according to claim 13.

17. A lamp that uses the group-III nitride compound semiconductor light-emitting device according to claim 9.

18. A lamp that uses the group-III nitride compound semiconductor light-emitting device according to claim 10.

19. A lamp that uses the group-III nitride compound semiconductor light-emitting device according to claim 16.