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SEMICONDUCTOR DEVICE USING ELEMENT ISOLATION REGION OF TRENCH ISOLATION STRUCTURE AND MANUFACTURING METHOD THEREOF

  • US 20090194810A1
  • Filed: 01/28/2009
  • Published: 08/06/2009
  • Est. Priority Date: 01/31/2008
  • Status: Abandoned Application
First Claim
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1. A manufacturing method of a semiconductor device comprising:

  • forming a stacked film configuring a semiconductor device on a semiconductor substrate,patterning the stacked film by reactive ion etching to form an isolation trench that isolates elements and expose a surface of the semiconductor substrate at least a bottom portion of the isolation trench,filling an O3-TEOS series film exhibiting underlying material selectivity as a first filling dielectric film in the isolation trench to have a thick film thickness on the bottom portion of the isolation trench, andfilling the isolation trench with a second filling dielectric film to form an element-element isolation region.

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