MEMS Packaging Including Integrated Circuit Dies
First Claim
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1. A micro-electromechanical system (MEMS), comprising:
- a MEMS device having a first plurality of terminals; and
a cap section including at least one pass-through via and at least one microelectronic device, and a second plurality of terminals;
wherein the MEMS device and the cap section are electrically coupled through the first plurality and the second plurality of terminals.
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Abstract
MEMS packaging schemes having a system-on-package (SOP) configuration and a system-on-board (SOB) configuration are provided. The MEMS package comprises one or more MEMS dies, a cap section having one or more integrated circuit (IC) dies, and a packaging substrate or a printed circuit board (PCB) arranged in a stacking manner. Vertical connectors, such as through-silicon-vias (TSVs), are formed to provide short electrical connections between the various components. The MEMS packaging schemes enable higher integration density, reduced MEMS package footprints, reduced RC delays and power consumption.
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Citations
20 Claims
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1. A micro-electromechanical system (MEMS), comprising:
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a MEMS device having a first plurality of terminals; and a cap section including at least one pass-through via and at least one microelectronic device, and a second plurality of terminals; wherein the MEMS device and the cap section are electrically coupled through the first plurality and the second plurality of terminals. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8)
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9. An apparatus, comprising:
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a micro-electromechanical system (MEMS) device comprising at least one electronic circuit, the at least one electronic circuit being electrically coupled to at least one terminal on a first surface of the MEMS device; a cap section underlying the MEMS device comprising at least one semiconductor device, wherein the at least one semiconductor device is electrically coupled to the at least one electronic circuit in the MEMS device through the at least one terminal on the MEMS device, and wherein the at least one semiconductor device is also electrically coupled to at least one contact on a first connecting surface of the cap section through internal metal interconnections and at least one pass-through via in the cap section; and a substrate underlying the cap section comprising at least one contact on a supporting surface. - View Dependent Claims (10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20)
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Specification