SUBSTRATE CONTACT FOR ADVANCED SOI DEVICES BASED ON A DEEP TRENCH CAPACITOR CONFIGURATION
First Claim
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1. A method, comprising:
- forming a first trench in a first device region and a second trench in a second device region of an SOI semiconductor device, said first and second trenches extending from a height level approximately corresponding to a semiconductor layer through a buried insulating layer and into a substrate material of said SOI semiconductor device;
forming an insulating layer on an inner surface of said first and second trenches;
filling said first and second trenches with a conductive material;
forming a transistor element in and on said semiconductor layer;
forming an interlayer dielectric material above said transistor element;
forming a first contact element and a second contact element in said interlayer dielectric material, said first contact element establishing an electric connection to said conductive material formed in said first trench and said second contact element connecting to said transistor element; and
selectively establishing a conductive path between said substrate and said conductive material in said first trench so as to provide a substrate contact.
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Abstract
By forming a first portion of a substrate contact in an SOI device on the basis of a trench capacitor process, the overall manufacturing process for patterning contact elements may be enhanced since the contacts may only have to extend down to the level of the semiconductor layer. Since the lower portion of the substrate contact may be formed concurrently with the fabrication of trench capacitors, complex patterning steps may be avoided which may otherwise have to be introduced when the substrate contacts are to be formed separately from contact elements connecting to the device level.
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Citations
23 Claims
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1. A method, comprising:
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forming a first trench in a first device region and a second trench in a second device region of an SOI semiconductor device, said first and second trenches extending from a height level approximately corresponding to a semiconductor layer through a buried insulating layer and into a substrate material of said SOI semiconductor device; forming an insulating layer on an inner surface of said first and second trenches; filling said first and second trenches with a conductive material; forming a transistor element in and on said semiconductor layer; forming an interlayer dielectric material above said transistor element; forming a first contact element and a second contact element in said interlayer dielectric material, said first contact element establishing an electric connection to said conductive material formed in said first trench and said second contact element connecting to said transistor element; and selectively establishing a conductive path between said substrate and said conductive material in said first trench so as to provide a substrate contact. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13)
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14. A method of forming a substrate contact in an SOI device, the method comprising:
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forming a first trench and a second trench so as to extend from a height level approximately corresponding to a semiconductor layer of said SOI device through a buried insulating layer and into a substrate material of said SOI device; filling said first and second trenches with a dielectric liner and a conductive material to form a first structure acting as a capacitor and a second structure acting as a capacitor, said substrate representing a first electrode and said conductive material representing a second electrode in each of said first and second structures; and selectively applying a voltage to said first structure so as to permanently damage said dielectric liner to establish a conductive path between said first electrode and said second electrode of the first structure. - View Dependent Claims (15, 16, 17, 18)
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19. A semiconductor device, comprising:
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a semiconductor material; a buried insulating layer formed on said semiconductor material; a semiconductor layer formed on said buried insulating layer; and a substrate contact comprising; a trench extending from a height level corresponding to said semiconductor layer through said buried insulating layer and into said semiconductor material; a liner formed on an inner surface of said trench and comprised of a dielectric material provided in a damaged state; and a first conductive fill material, said liner forming a conductive path between said conductive fill material and said substrate material. - View Dependent Claims (20, 21, 22, 23)
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Specification