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SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

  • US 20090194879A1
  • Filed: 12/16/2008
  • Published: 08/06/2009
  • Est. Priority Date: 02/01/2008
  • Status: Active Grant
First Claim
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1. A semiconductor device comprising:

  • a plurality of first interconnection layers which are provided in an insulating layer and formed in a pattern having a width and space smaller than a resolution limit of an exposure technique; and

    a second interconnection layer which is provided between the first interconnection layers in the insulating layer and has a width larger than that of a first interconnection layer,wherein a space between the second interconnection layer and each of first interconnection layers adjacent to both sides of the second interconnection layer equals the space between the first interconnection layers.

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