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DOSIMETRY USING OPTICAL EMISSION SPECTROSCOPY/RESIDUAL GAS ANALYZER IN CONJUNCTION WITH ION CURRENT

  • US 20090195777A1
  • Filed: 04/02/2009
  • Published: 08/06/2009
  • Est. Priority Date: 10/23/2004
  • Status: Abandoned Application
First Claim
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1. An apparatus for processing a substrate, comprising:

  • a process chamber defining a process volume;

    a conductive support pedestal positioned in the process volume;

    a gas distribution assembly connected to a gas panel and positioned parallel the conductive support pedestal, wherein an RF plasma bias power supply is coupled between the gas distribution assembly and the conductive support pedestal;

    a first sensor configured to monitor one or more attributes of a plasma generated in the process volume;

    a second sensor configured to monitor one or more attribute of the RF plasma bias power supply; and

    a controller coupled to the first and second sensors, wherein the controller is configured to receive and analyze signals from the first and second sensors.

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