WAFER PROCESSING
First Claim
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1. A method for processing a semiconductor wafer, comprising:
- removing portions of a first side of the semiconductor wafer to form a number of trenches of a particular depth and a first width in rows and columns;
forming a passivation layer on side walls of the number of trenches; and
cutting a second side of the semiconductor wafer with a wafer saw blade having a second width greater than the first width in rows and columns aligned with the number of trenches such that the semiconductor wafer singulates into a number of dice.
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Abstract
Methods for processing semiconductor wafers are described herein. One embodiment includes removing portions of a first side of the semiconductor wafer to form a number of trenches of a particular depth in rows and columns. The method further includes forming a passivation layer on side walls of the number of trenches. The method also includes cutting a second side of the semiconductor wafer in rows and columns aligned with the number of trenches such that the semiconductor wafer singulates into a number of dice.
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Citations
27 Claims
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1. A method for processing a semiconductor wafer, comprising:
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removing portions of a first side of the semiconductor wafer to form a number of trenches of a particular depth and a first width in rows and columns; forming a passivation layer on side walls of the number of trenches; and cutting a second side of the semiconductor wafer with a wafer saw blade having a second width greater than the first width in rows and columns aligned with the number of trenches such that the semiconductor wafer singulates into a number of dice. - View Dependent Claims (2, 3, 4)
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5. A method for processing a semiconductor wafer, comprising:
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forming a number of electronic devices on a first side of the semiconductor wafer; thinning a second side of the semiconductor wafer; and etching the first side of the semiconductor wafer in a number of rows and columns between the number of electronic devices to the second side of the semiconductor wafer after thinning the second side to singulate the semiconductor wafer into a number of dice. - View Dependent Claims (6, 7, 8)
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9. A method for processing a semiconductor wafer, comprising:
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forming a number of electronic devices on a first side of the semiconductor wafer; removing portions of the first side of the semiconductor wafer to form a number of trenches to a particular depth and a first width in perpendicular rows and columns on the first side of the semiconductor wafer; forming a passivation layer over the number of electronic devices and on side walls of the number of trenches; thinning a second side of the semiconductor wafer; and cutting the second side of the semiconductor wafer with a wafer saw blade having a second width greater than the first width in rows and columns aligned with the number of trenches such that the semiconductor wafer singulates into a number of dice corresponding to the number of electronic devices. - View Dependent Claims (10, 11, 12, 13, 14, 15)
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16. A method for processing a semiconductor wafer, comprising:
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forming a number of electronic devices on a first side of the semiconductor wafer; etching a number of trenches to a particular depth in rows and columns on the first side of the semiconductor wafer; depositing a polyimide layer to fill the number of trenches and cover the number of electronic devices; thinning a second side of the semiconductor wafer to connect with the number of trenches; applying an adhesive material to the second side of the semiconductor wafer; and removing the entire polyimide layer to singulate the semiconductor wafer into a number of dice corresponding to the number of electronic devices. - View Dependent Claims (17, 18, 26, 27)
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Specification