SUBSTRATE PROCESSING APPARATUS

• US 20090197418A1
• Filed: 02/25/2009
• Published: 08/06/2009
• Est. Priority Date: 02/28/2002
• Status: Active Grant

• Current Assignee: Canon Anelva Corporation (Canon Inc.)
• Original Assignee: Canon Anelva Corporation (Canon Inc.)
• Inventors: IKEDA, Masayoshi, SAGO, Yasumi, OKADA, Takuji, KANEKO, Kazuaki
• Granted Patent: US 7,976,716 B2
• Time in Patent Office: Days
• US Class Current: 438/710
• CPC Class Codes: H01L 21/67017 Apparatus for fluid treatment H01L21/67126, H01L21/6715 take precedence
• CPC Class Codes: H01L 21/67109 mainly by convection

Abstract

A method of using a heat exchanger efficiently and uniformly to cool or heats portions to be controlled to a prescribed temperature, and then continuously carry out stable processing. The heat exchanger is constructed by arranging partition walls between two plates to form a fluid channel and a fin parallel with the channel or inclined by a prescribed angle on each of the two plates insides the channel so that the plate or a member in contact with the plate is cooled or heated with the fluid flowing through the channel.

Claims

1. A semiconductor device manufacturing method using an apparatus having a substrate holder, a gas emittor, and a heat exchanger in a process chamber, the heat exchanger comprising:

a first plate;

a second plate facing said first plate;

a fluid channel wall having no end, the fluid channel wall arranged between said first plate and said second plate to form a fluid channel for a fluid;

an introduction port for introducing said fluid into said fluid channel;

a discharge port for discharging said fluid from said fluid channel;

a discontinuous first fin having a plurality of substantially aligned first fin segments extending in an arcuate shape, a gap of a first length extending between adjacent ones of the first fin segments, said discontinuous first fin being disposed on said first plate and inside said fluid channel along said channel, and a height of the discontinuous first fin being less than the distance between said two plates; and

a discontinuous second fin having a plurality of substantially aligned second fin segments extending in an arcuate shape, a gap of a second length extending between adjacent ones of the second fin segments, said discontinuous second fin being disposed on said second plate and inside said fluid channel along said fluid channel, and a height of said discontinuous second fin being less than the distance between said two plates;

the method comprising

positioning a substrate on the substrate holder;

flowing a fluid inside said fluid channel; and

causing plasma of the gas to process said substrate.