TECHNIQUES FOR COLD IMPLANTATION OF CARBON-CONTAINING SPECIES

• US 20090200494A1
• Filed: 03/31/2008
• Published: 08/13/2009
• Est. Priority Date: 02/11/2008
• Status: Abandoned Application

• Current Assignee: Varian Semiconductor Equipment Associates Incorporated (Applied Materials Incorporated)
• Original Assignee: Varian Semiconductor Equipment Associates Incorporated (Applied Materials Incorporated)
• Inventors: Renau, Anthony, Hatem, Christopher R., Dickerson, Gary E.
• Application Number:
  US12/059,437
• Publication Number:
  US 20090200494A1
• Time in Patent Office: Days
• US Class Current: 250/492.210
• CPC Class Codes: H01J 2237/2001 Maintaining constant desired temperature
• CPC Class Codes: H01J 2237/31701 Ion implantation
• CPC Class Codes: H01J 37/3171 for ion implantation
• CPC Class Codes: H01J 37/32412 Plasma immersion ion implantation
• CPC Class Codes: H01L 21/26506 in group IV semiconductors
• CPC Class Codes: H01L 21/26513 of electrically active species
• CPC Class Codes: H01L 21/2658 of a molecular ion, e.g. decaborane
• CPC Class Codes: H01L 21/26593 at a temperature lower than room temperature

Abstract

Techniques for cold implantation of carbon-containing species are disclosed. In one particular exemplary embodiment, the techniques may be realized as an apparatus for ion implantation including a cooling device for cooling a target material to a predetermined temperature, and an ion implanter for implanting the target material with a carbon-containing species at the predetermined temperature to improve at least one of strain and amorphization.

Claims

1. A method for ion implantation, the method comprising:

cooling a target material to a predetermined temperature; and

implanting the target material with a carbon-containing species at the predetermined temperature to improve at least one of strain and amorphization.

2. The method of claim 1, wherein the target material is cooled by at least one of a backside cooling, thermal conditioning cooling, and pre-chilling.

3. The method of claim 1, wherein the predetermined temperature is below room temperature and above −

212°

C.

4. The method of claim 1, wherein the predetermined temperature is in the range of −

20°

C. to −

100°

C.

5. The method of claim 1, wherein the carbon-containing species is molecular carbon comprising at least one of carbon, diborane, pentaborane, carborane, octaborane, decaborane, and octadecaborane.

6. The method of claim 1, wherein the carbon-containing species is an alkane or alkene comprising at least one of methane, ethane, propane, bibenzyl, butane, and pyrene.

7. The method of claim 1, further comprising implanting the target material with an additional species for improved pre-amorphization implantation (PAI) or improved conductance of the target material.

9. The method of claim 1, wherein the method is used to at least create strain and fabricate an ultra-shallow junction (USJ) in the target material.

10. The method of claim 1, further comprising controlling at least one of dose, dose rate, number of atoms in the carbon-containing species, atomic energy, and pressure to further improve at least one of strain and amorphization.

8. The method of claim 8, wherein the additional species comprises at least one of germanium (Ge), boron (B), phosphorus (P), silicon (Si), arsenic (As), xenon (Xe), carbon (C), nitrogen (N), aluminum (Al), magnesium (Mg), silver (Ag), gold (A), carborane (C₂B₁₀H₁₂), boron difluoride (BF2), decaborane, octadecaborane, and diborane.

11. An apparatus for ion implantation, the apparatus comprising:

a cooling device for cooling a target material to a predetermined temperature; and

an ion implanter for implanting the target material with a carbon-containing species at the predetermined temperature to improve at least one of strain and amorphization.

12. The apparatus of claim 11, wherein the cooling device comprises at least one of a backside cooling device, a thermal conditioning unit, and a pre-chiller.

13. The apparatus of claim 11, wherein the predetermined temperature is below room temperature and above −

212°

C.

14. The apparatus of claim 11, wherein the predetermined temperature is in the range of −

20°

C. to −

100°

C.

15. The apparatus of claim 11, wherein the carbon-containing species is molecular carbon comprising at least one of carbon, diborane, pentaborane, carborane, octaborane, decaborane, and octadecaborane.

16. The apparatus of claim 11, wherein the carbon-containing species is an alkane or alkene comprising at least one of methane, ethane, propane, bibenzyl, butane, and pyrene.

17. The apparatus of claim 11, wherein the ion implanter is a plasma doping system or a beam-line ion implanter.

18. The apparatus of claim 11, wherein the ion implanter further implants the target material with an additional species for improved pre-amorphization implantation (PAI) or improved conductance of the target material.

19. The apparatus of claim 18, wherein the additional species comprises at least one of germanium (Ge), boron (B), phosphorus (P), silicon (Si), arsenic (As), xenon (Xe), carbon (C), nitrogen (N), aluminum (Al), magnesium (Mg), silver (Ag), gold (A), carborane (C₂B₁₀H₁₂), boron difluoride (BF2), decaborane, octadecaborane, and diborane.

20. The apparatus of claim 11, further comprising one or more controllers for controlling at least one of dose, dose rate, number of atoms in the carbon-containing species, atomic energy, and pressure to improve at least one of strain and amorphization.

21. An apparatus for ion implantation, the apparatus comprising:

a means for cooling a target material to a predetermined temperature; and

a means for implanting the target material with a carbon-containing species at the predetermined temperature to improve at least one of strain and amorphization.