SEMICONDUCTOR DEVICE

• US 20090200557A1
• Filed: 01/12/2009
• Published: 08/13/2009
• Est. Priority Date: 02/07/2008
• Status: Active Grant

• Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: KAMATA, Koichiro
• Granted Patent: US 7,923,733 B2
• Time in Patent Office: Days
• US Class Current: 257/66
• CPC Class Codes: G06K 19/07749 the record carrier being capable of non-contact communication, e.g. constructional details of the antenna of a non-contact smart card
• CPC Class Codes: G06K 19/07775 the antenna being on-chip
• CPC Class Codes: G06K 19/07779 the inductive antenna being a coil
• CPC Class Codes: H01L 21/268 using electromagnetic radiation, e.g. laser radiation
• CPC Class Codes: H01L 27/1255 integrated with passive devices, e.g. auxiliary capacitors
• CPC Class Codes: H01L 27/1266 the substrate on which the devices are formed not being the final device substrate, e.g. using a temporary substrate
• CPC Class Codes: H01L 29/78621 with LDD structure or an extension or an offset region or characterised by the doping profile
• CPC Class Codes: H01L 29/78627 with a significant overlap between the lightly doped drain and the gate electrode, e.g. GOLDD

Abstract

A semiconductor device includes a semiconductor layer including a channel region, and a first region and a second region to which an impurity element is introduced to make the first region and the second region a source and a drain, a third region, and a gate electrode provided to partly overlap with the semiconductor layer with a gate insulating film interposed therebetween In the semiconductor layer, the first region is electrically connected to the gate electrode through a first electrode to which an AC signal is input, the second region is electrically connected to a capacitor element through a second electrode, the third region overlaps with the gate electrode and contains an impurity element at lower concentrations than each of the first region and the second region.

Claims

1. A semiconductor device comprising:

a semiconductor layer comprising;

a first region comprising an impurity element imparting n-type conductivity;

a second region comprising the impurity element imparting n-type conductivity;

a third region between the first region and the second region; and

a channel region between the first region and the third region; and

a gate electrode overlapped with the semiconductor layer with a gate insulating film interposed between the gate electrode and the semiconductor layer,

wherein the first region is electrically connected to the gate electrode through a first electrode,

wherein the second region is electrically connected to an electrode of a capacitor element through a second electrode,

wherein the channel region overlaps with the gate electrode and is in contact with the first region,

wherein the third region overlaps with the gate electrode, and

wherein the third region comprises the impurity element at lower concentrations than each of the first region and the second region.

2. The semiconductor device according to claim 1, wherein the first electrode is configured to be input an AC signal.

3. The semiconductor device according to claim 2,

wherein the AC signal is a signal which consecutively inputs a first potential and a second potential with a reference potential as an intermediate potential between the first potential and the second potential, and

wherein a potential of a signal output from the second region is higher than the reference potential and equal to or lower than the first potential.

4. The semiconductor device according to claim 1, wherein the first electrode is electrically connected to an antenna for receiving a wireless signal.

5. The semiconductor device according to claim 1, wherein a concentration of the impurity element to be introduced to the third region is 2.0×

10<sup>−

18</sup> to 4.0×

10×

10<sup>−

18</sup> cm<sup>−

3</sup>.

6. The semiconductor device according to claim 1, wherein a transistor included in the semiconductor device is a thin film transistor.

7. The semiconductor device according to claim 1, wherein at least one of the first region and the second region functions as a drain of a thin film transistor.

8. The semiconductor device according to claim 1, wherein the gate electrode overlaps with the third region entirely.

9. The semiconductor device according to claim 1 is one selected from the group consisting of an IC label, an IC tag, and an IC card.

10. A semiconductor device comprising:

an antenna circuit;

a rectifier circuit operationally connected to the antenna circuit and comprising a transistor comprising;

a semiconductor layer comprising;

a first region comprising an impurity element imparting n-type conductivity;

a second region comprising the impurity element imparting n-type conductivity;

a third region between the first region and the second region; and

a channel region between the first region and the third region;

a gate electrode overlapped with the semiconductor layer with a gate insulating film interposed between the gate electrode and the semiconductor layer;

a constant voltage circuit electrically connected to the rectifier circuit; and

a logic circuit electrically connected to the constant voltage circuit,

wherein the first region is electrically connected to the gate electrode through a first electrode,

wherein the second region is electrically connected to an electrode of a capacitor element through a second electrode,

wherein the channel region overlaps with the gate electrode and is in contact with the first region, and

wherein the third region overlaps with the gate electrode, and

wherein the third region comprises the impurity element at lower concentrations than each of the first region and the second region.

11. The semiconductor device according to claim 10, wherein the first electrode is configured to be input an AC signal.

12. The semiconductor device according to claim 11,

wherein the AC signal is a signal which consecutively inputs a first potential and a second potential with a reference potential as an intermediate potential between the first potential and the second potential, and

wherein a potential of a signal output from the second region is higher than the reference potential and equal to or lower than the first potential.

13. The semiconductor device according to claim 10, wherein the first electrode is electrically connected to an antenna in the antenna circuit for receiving a wireless signal.

14. The semiconductor device according to claim 10, wherein a concentration of the impurity element to be introduced to the third region is 2.0×

10<sup>−

18</sup> to 4.0×

10<sup>−

18</sup> cm<sup>−

3</sup>.

15. The semiconductor device according to claim 10, wherein a transistor included in the semiconductor device is a thin film transistor.

16. The semiconductor device according to claim 10, wherein at least one of the first region and the second region functions as a drain of a thin film transistor.

17. The semiconductor device according to claim 10, wherein the gate electrode overlaps with the third region entirely.

18. The semiconductor device according to claim 10 is one selected from the group consisting of an IC label, an IC tag, and an IC card.

19. A semiconductor device comprising:

a semiconductor layer comprising;

a first region comprising an impurity element imparting n-type conductivity;

a second region comprising the impurity element imparting n-type conductivity;

a third region comprising an impurity element imparting n-type conductivity between the first region and the second region;

a fourth region between the first region and the third region;

a fifth region between the second region and the third region;

a first channel region between the first region and the fourth region; and

a second channel region between the second region and the fifth region;

a first gate electrode overlapped with the first channel region and the fourth region with a gate insulating film interposed between the first gate electrode and the semiconductor layer; and

a second gate electrode overlapped with the second channel region and the fifth region with the gate insulating film interposed between the second gate electrode and the semiconductor layer,

wherein the first region and the second region are electrically connected to the first gate electrode and the second gate electrode through a first electrode and a second electrode, respectively,

wherein the third region is electrically connected to an electrode of a capacitor element through a third electrode,

wherein the first channel region is in contact with the first region,

wherein the second channel region is in contact with the second region,

wherein the fourth region comprises the impurity element at lower concentrations than each of the first region and the second region, and

wherein the fifth region comprises the impurity element at lower concentrations than each of the first region and the second region.

20. The semiconductor device according to claim 19, wherein at least the first electrode is configured to be input an AC signal.

21. The semiconductor device according to claim 20,

wherein the AC signal is a signal which consecutively inputs a first potential and a second potential with a reference potential as an intermediate potential between the first potential and the second potential, and

wherein a potential of a signal output from the second region is higher than the reference potential and equal to or lower than the first potential.

22. The semiconductor device according to claim 19, wherein the first electrode is electrically connected to an antenna for receiving a wireless signal.

23. The semiconductor device according to claim 19, wherein a concentration of the impurity element to be introduced to the fourth region is 2.0×

19<sup>−

18</sup> to 4.0×

19<sup>−

18</sup> cm<sup>−

3</sup>.

24. The semiconductor device according to claim 19, wherein a transistor included in the semiconductor device is a thin film transistor.

25. The semiconductor device according to claim 19, wherein at least one of the first region, the second region, and the third region functions as a drain of a thin film transistor.

26. The semiconductor device according to claim 19, wherein the first gate electrode and the second gate electrode entirely overlaps with the fourth region and the fifth region, respectively.

27. The semiconductor device according to claim 19 is one selected from the group consisting of an IC label, an IC tag, and an IC card.