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SEMICONDUCTOR LIGHT-EMITTING DEVICE

  • US 20090200568A1
  • Filed: 04/30/2007
  • Published: 08/13/2009
  • Est. Priority Date: 05/02/2006
  • Status: Abandoned Application
First Claim
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1. A compound semiconductor light-emitting-element comprising, on a substrate transparent to an emission wavelength, a compound semiconductor thin-film crystal layer having a first-conductivity-type semiconductor layer containing a first-conductivity-type cladding layer, an active layer structure and a second-conductivity-type semiconductor layer containing a second-conductivity-type cladding layer;

  • a second-conductivity-type-side electrode; and

    a first-conductivity-type-side electrode, in which a main light-extraction direction is the side of the substrate,wherein;

    the first-conductivity-type-side electrode and the second-conductivity-type-side electrode are not spatially overlapped and are formed on the opposite side to the main light-extraction direction;

    the light-emitting-element comprises a light-uniforming layer, for improving uniformity of a light outgoing from a light-extraction-face, between the substrate and the first-conductivity-type semiconductor layer, and optionally a buffer layer between the substrate and the light-uniforming layer;

    at the edge of the light-emitting-element, sidewalls of at least the first-conductivity-type semiconductor layer, the active layer structure and the second-conductivity-type semiconductor layer form a setback-sidewall-surface which recedes from the edge of the substrate on a sidewall surface of the thin-film crystal layer; and

    the light-emitting-element comprises an insulating layer at least covering the setback-sidewall-surface of the first-conductivity-type semiconductor layer, the active layer structure and the second-conductivity-type semiconductor layer;

    the insulating layer (a) being in contact with a part of the first-conductivity-type-side electrode at the side of the main light-extraction direction and covering a part of the second-conductivity-type-side electrode on the side opposite to the main light-extraction direction and (b) at least, covering the setback-sidewall-surface at a position distant from the light-emitting-element edge.

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