Power Device Edge Termination Having a Resistor with One End Biased to Source Voltage

• US 20090200606A1
• Filed: 04/16/2009
• Published: 08/13/2009
• Est. Priority Date: 03/31/2006
• Status: Active Grant

• Current Assignee: Semiconductor Components Industries LLC (ON Semiconductor Corporation)
• Original Assignee: Daniel Calafut, Hamza Yilmaz
• Inventors: Yilmaz, Hamza, Calafut, Daniel
• Granted Patent: US 7,863,708 B2
• Time in Patent Office: Days
• US Class Current: 257/330
• CPC Class Codes: H01L 29/0646 PN junctions
• CPC Class Codes: H01L 29/0653 adjoining the input or output region of a field-effect device, e.g. the source or drain region
• CPC Class Codes: H01L 29/1095 Body region, i.e. base region, of DMOS transistors or IGBTs cell layout H01L29/0696
• CPC Class Codes: H01L 29/402 Field plates
• CPC Class Codes: H01L 29/407 Recessed field plates, e.g. trench field plates, buried field plates
• CPC Class Codes: H01L 29/41741 for vertical or pseudo-vertical devices
• CPC Class Codes: H01L 29/456 on silicon
• CPC Class Codes: H01L 29/7803 structurally associated with at least one other device assemblies H01L25/00; integrated circuits H01L27/00
• CPC Class Codes: H01L 29/7808 the other device being a breakdown diode, e.g. Zener diode
• CPC Class Codes: H01L 29/7811 with an edge termination structure guard regions per se H01L29/0619; field plates per se H01L29/402
• CPC Class Codes: H01L 29/7813 with trench gate electrode, e.g. UMOS transistors trench gate electrodes per se H01L29/4236

Abstract

A field effect transistor (FET) includes a source electrode for receiving an externally-provided source voltage. The FET further includes an active region and a termination region surrounding the active region. A resistive element is coupled to the termination region, wherein upon occurrence of avalanche breakdown in the termination region an avalanche current starts to flow in the termination region, and the resistive element is configured to induce a portion of the avalanche current to flow through the termination region and a remaining portion of the avalanche current to flow through the active region. During operation, one end of the resistive element is biased to the source voltage.

Claims

1. A field effect transistor comprising:

a source electrode for receiving an externally-provided source voltage;

an active region;

a termination region surrounding the active region; and

a resistive element coupled to the termination region, wherein upon occurrence of avalanche breakdown in the termination region an avalanche current starts to flow in the termination region, and the resistive element is configured to induce a portion of the avalanche current to flow through the termination region and a remaining portion of the avalanche current to flow through the active region,

wherein during operation, one end of the resistive element is biased to the source voltage.

2. The field effect transistor of claim 1 wherein the termination region includes a termination well of a first conductivity type extending to a first depth within a drift region of a second conductivity type, and the active region includes an active well of the first conductivity type extending to a second depth within the drift region, the first depth being deeper than the second depth.

3. The field effect transistor of claim 2 wherein the termination well forms the other end of the resistive element.

4. The field effect transistor of claim 2 wherein the termination well forms a ring surrounding the active region, the termination well comprising a plurality of discontinuous well contact regions intermittently placed around the active region, the plurality of well contact regions being of the first conductivity type.

5. The field effect transistor of claim 2 further comprising:

a first interconnect layer extending over the active region and a portion of the termination region; and

a second interconnect layer configured to electrically connect the termination well to the first interconnect layer, wherein the second interconnect layer has a lower conductivity than the first interconnect layer.

6. The field effect transistor of claim 5 wherein the first interconnect layer comprises metal, and the second interconnect layer comprises polysilicon.

7. The field effect transistor of claim 1 wherein the active region includes charge balanced structures.

8. The field effect transistor of claim 1 wherein the active region includes a plurality of trench power MOSFET cells.

9. The field effect transistor of claim 1 further comprising:

an interconnect layer having a first portion extending over the active region and a second portion extending over the termination region; and

a dielectric layer partially insulating the first and second portions of the interconnect layer from one another, the second portion of the interconnect layer forming a part of the resistive element.

10. The field effect transistor of claim 9 wherein the second portion of the interconnect layer serves as a field plate extending over the termination region.

11. The field effect transistor of claim 1 wherein the resistive element has a value in the range of 1 kΩ

*μ

m to 1 mega-Ω

*μ

m.

12. The field effect transistor of claim 1 further comprising:

a body region extending in a drift region so as to form a pn junction therebetween;

source regions extending in the body region so as to form pn junctions therebetween, the source regions and the body region being coupled to the source electrode; and

a gate electrode extending adjacent to the body region.

13. A field effect transistor comprising:

a source electrode for receiving an externally-provided source voltage;

an active region;

a termination region surrounding the active region;

a resistive means coupled to the termination region, wherein upon occurrence of avalanche breakdown in the termination region an avalanche current starts to flow in the termination region, and when the avalanche current reaches a predetermined level the resistive means operates to induce a portion of the avalanche current to flow through the termination region and a remaining portion of the avalanche current to flow through the active region,

wherein during operation, one end of the resistive element is biased to the source voltage.

14. The field effect transistor of claim 13 wherein the termination region includes a termination well of first conductivity type extending to a first depth within a drift region of a second conductivity type.

15. The field effect transistor of claim 14 wherein the termination well forms the other end of the resistive means.

16. The field effect transistor of claim 14 wherein the termination well forms a ring surrounding the active region, the termination well comprising a plurality of discontinuous well contact regions intermittently placed around the active region, the plurality of well contact regions being of the first conductivity type.

17. The field effect transistor of claim 13 further comprising:

a first interconnect layer extending over the active region and a portion of the termination region; and

a second interconnect layer configured to electrically connect the termination well to the first interconnect layer, wherein the second interconnect layer has a lower conductivity than the first interconnect layer.

18. The field effect transistor of claim 13 further comprising:

an interconnect layer having a first portion extending over the active region and a second portion extending over the termination region; and

a dielectric layer partially insulating the first and second portions of the interconnect layer from one another, the second portion of the interconnect layer forming a part of the resistive means.

19. The field effect transistor of claim 13 further comprising:

a body region extending in a drift region so as to form a pn junction therebetween;

source regions extending in the body region so as to form pn junctions therebetween, the source regions and the body region being coupled to the source electrode; and

a gate electrode extending adjacent to the body region.