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ENHANCED INTERCONNECT STRUCTURE

  • US 20090200669A1
  • Filed: 01/19/2009
  • Published: 08/13/2009
  • Est. Priority Date: 10/11/2006
  • Status: Active Grant
First Claim
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1. A semiconductor device comprising;

  • an interconnect structure having a dielectric layer with at least one conductive interconnect embedded therein;

    a diffusion barrier layer surrounding said at least one conductive interconnect and in contact with said dielectric layer and said at least one conductive interconnect;

    a dielectric capping layer in contact with said dielectric layer and said at least one conductive interconnect, anda portion of said diffusion barrier layer extending into said dielectric capping layer.

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