ENHANCED INTERCONNECT STRUCTURE
First Claim
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1. A semiconductor device comprising;
- an interconnect structure having a dielectric layer with at least one conductive interconnect embedded therein;
a diffusion barrier layer surrounding said at least one conductive interconnect and in contact with said dielectric layer and said at least one conductive interconnect;
a dielectric capping layer in contact with said dielectric layer and said at least one conductive interconnect, anda portion of said diffusion barrier layer extending into said dielectric capping layer.
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Abstract
The present invention provides a semiconductor interconnect structure with improved mechanical strength at the capping layer/dielectric layer/diffusion barrier interface. The interconnect structure has Cu diffusion barrier material embedded in the Cu capping material. The barrier can be either partially embedded in the cap layer or completely embedded in the capping layer.
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10 Claims
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1. A semiconductor device comprising;
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an interconnect structure having a dielectric layer with at least one conductive interconnect embedded therein; a diffusion barrier layer surrounding said at least one conductive interconnect and in contact with said dielectric layer and said at least one conductive interconnect; a dielectric capping layer in contact with said dielectric layer and said at least one conductive interconnect, and a portion of said diffusion barrier layer extending into said dielectric capping layer. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10)
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Specification