Lateral optically pumped surface-emitting semiconductor laser on a heat sink

• US 20090201958A1
• Filed: 09/20/2005
• Published: 08/13/2009
• Est. Priority Date: 09/22/2004
• Status: Active Grant

• Current Assignee: Osram Opto Semiconductors GmbH (Ams-Osram AG)
• Original Assignee: Osram Opto Semiconductors GmbH (Ams-Osram AG)
• Inventors: Schwarz, Thomas, Reill, Wolfgang, Lutgen, Stephan, Steegmuller, Ulrich, Albrecht, Tony
• Granted Patent: US 7,817,695 B2
• Time in Patent Office: Days
• US Class Current: 372/36
• CPC Class Codes: H01L 2224/48091 Arched
• CPC Class Codes: H01L 2224/48227 connecting the wire to a bond pad of the item
• CPC Class Codes: H01L 2924/00014 the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 2924/19107 off-chip wires
• CPC Class Codes: H01S 3/0815 having 3 reflectors, e.g. V-shaped resonators
• CPC Class Codes: H01S 3/109 Frequency multiplication, e.g. harmonic generation
• CPC Class Codes: H01S 5/0217 Removal of the substrate
• CPC Class Codes: H01S 5/02325 Mechanically integrated components on mount members or optical micro-benches
• CPC Class Codes: H01S 5/0234 Up-side down mountings, e.g. Flip-chip, epi-side down mountings or junction down mountings
• CPC Class Codes: H01S 5/0237 by soldering
• CPC Class Codes: H01S 5/02476 Heat spreaders, i.e. improving heat flow between laser chip and heat dissipating elements
• CPC Class Codes: H01S 5/026 Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers stabilisation of output H01S5/06
• CPC Class Codes: H01S 5/041 Optical pumping
• CPC Class Codes: H01S 5/141 using a wavelength selective device, e.g. a grating or etalon H01S5/146 takes precedence
• CPC Class Codes: H01S 5/183 having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
• CPC Class Codes: H01S 5/2027 Reflecting region or layer, parallel to the active layer, e.g. to modify propagation of the mode in the laser or to influence transverse modes
• CPC Class Codes: H01S 5/4056 emitting light in more than one direction

Abstract

A surface emitting semiconductor laser device comprising at least one surface emitting semiconductor laser (21) having a vertical emitter (1) and at least one pump radiation source (2), which are monolithically integrated alongside one another onto a common substrate (13), is described. The semiconductor laser device additionally has a heat-conducting element (18), which is in thermal contact with the semiconductor laser (21) and has a mounting area provided for mounting on a carrier (27). Methods for producing such a surface emitting semiconductor laser device are furthermore described.

Claims

1. A surface emitting semiconductor laser device, comprising:

at least one surface emitting semiconductor laser having a vertical emitter and at least one pump radiation source, which are monolithically integrated alongside one another onto a common substrate, and

a heat-conducting element, which is in thermal contact with the semiconductor laser and has a mounting area provided for mounting on a carrier.

2. The semiconductor laser device according to claim 1, in which the heat-conducting element is electrically conductive.

3. The semiconductor laser device according to claim 1, in which the heat-conducting element is suitable for making electrical contact with the semiconductor laser.

4. The semiconductor laser device according to claim 1, in which the heat-conducting element contains at least one of the following materials:

copper, diamond, silver, Al₂O₃, AlN, SiC, BN, copper-diamond.

5. The semiconductor laser device according to claim 1, in which there is a thermally stable adhesion between heat-conducting element and semiconductor laser.

6. The semiconductor device according to claim 1, in which the semiconductor laser is connected to the heat-conducting element at its surface remote from the substrate.

7. The semiconductor laser device according to claim 1, in which the substrate has at least one recess which contains the heat-conducting element.

8. The semiconductor laser device according to claim 7, in which the recess is etched into the substrate.

9. The semiconductor laser device according to claim 7, in which the heat-conducting element is electrodeposited into the recess.

10. The semiconductor laser device according to claim 1, in which the pump radiation source has at least one etched resonator facet.

11. A method for producing a surface emitting semiconductor laser device comprising the steps of:

a) providing a semiconductor wafer having a multiplicity of surface emitting semiconductor lasers which in each case have a vertical emitter and at least one pump radiation source, which are monolithically integrated alongside one another onto a common substrate;

b) providing a heat-conducting disc;

c) forming a compound by connecting the surface emitting semiconductor lasers to the heat-conducting disc at their surface remote from the substrate by means of a soldering method; and

d) singulating the compound.

12. The method according to claim 11,

wherein the semiconductor wafer is singulated to form individual surface emitting semiconductor lasers prior to step c).

13. A method for producing a surface emitting semiconductor laser device comprising the steps of:

providing an arrangement of a multiplicity of surface emitting semiconductor lasers which in each case have a vertical emitter and at least one pump radiation source, which are monolithically integrated alongside one another onto a common substrate;

producing at least one recess per semiconductor laser on the side of the substrate opposite to the semiconductor laser by means of an etching process;

electrodepositing heat-conducting material into the recesses, and

singulating the arrangement.