Method for Thin Film Formation

• US 20090202721A1
• Filed: 03/14/2006
• Published: 08/13/2009
• Est. Priority Date: 03/15/2005
• Status: Abandoned Application

• Current Assignee: NEC Corporation
• Original Assignee: NEC Corporation
• Inventors: Nogami, Hiroshi, Tanabe, Hiroshi, Yuda, Katsuhisa
• Application Number:
  US11/886,317
• Publication Number:
  US 20090202721A1
• Time in Patent Office: Days
• US Class Current: 427/255.230
• CPC Class Codes: C23C 16/401 containing silicon
• CPC Class Codes: C23C 16/402 Silicon dioxide
• CPC Class Codes: C23C 16/452 by activating reactive gas streams before their introduction into the reaction chamber, e.g. by ionisation or addition of reactive species
• CPC Class Codes: H01L 21/02164 the material being a silicon oxide, e.g. SiO2
• CPC Class Codes: H01L 21/02211 the compound being a silane, e.g. disilane, methylsilane or chlorosilane
• CPC Class Codes: H01L 21/02238 silicon in uncombined form, i.e. pure silicon
• CPC Class Codes: H01L 21/02252 formation by plasma treatment, e.g. plasma oxidation of the substrate after treatment of an insulating film by plasma H01L21/3105 and subgroups
• CPC Class Codes: H01L 21/02274 in the presence of a plasma [PECVD]
• CPC Class Codes: H01L 21/31612 on a silicon body

Abstract

A method for thin film formation that can form, at a low temperature, a good thin film having a good interfacial property between a silicon substrate and a silicon oxide film and having a low interfacial trap density is provided.

The method for thin film formation comprises generating plasma within a vacuum vessel to generate an active species (radical) and forming a silicon oxide film on a silicon substrate using this active species and a material gas, wherein, in addition to the material gas, a nitrogen atom-containing gas is introduced into the vacuum vessel in its film forming space where the active species (radical) and the material gas come into contact with each other for the first time and are reacted with each other to form a silicon film on the silicon substrate, and wherein the flow rate of the nitrogen atom-containing gas during the formation of the silicon oxide film on the silicon substrate is regulated so as to be the maximum value at least at the time of the start of formation of the silicon film on the silicon substrate.

Claims

1. In the thin film formation apparatus that includes a vacuum vessel internally separated into two compartments by means of a conductive partition plate, one of the two compartments serving as a plasma generating space in which a high frequency electrode is disposed and the other serving as a film forming space in which a substrate holding mechanism is disposed for holding a silicon substrate firmly thereon, the conductive partition plate having a plurality of penetrating holes through which the plasma generating space and film forming space communicate with each other, and further including a first inner space separated from the plasma generating space and communicating with the film forming space through a plurality of material gas diffusion holes provided on the conductive partition plate and a second inner space separated from the first inner space and communicating with the film forming space through a plurality of gas diffusion holes provided on the conductive partition plate, a thin film formation method for forming a thin film on a silicon substrate, including introducing a gas into the plasma generating space for discharging plasma and generating a desired active species (radical) by the discharged plasma, introducing the desired active species generated in the plasma generating space into the film forming space through the plurality of penetrating holes on the conductive partition plate, introducing the material gas supplied from its external source into the first inner space through the plurality of material gas diffusion holes, and introducing any suitable gas other than the material gas supplied from the external source into the film forming space through the plurality of gas diffusion holes, thereby forming a silicon oxide film on the silicon substrate by allowing the active species and material gas introduced into the film forming space to react with each other, wherein any suitable gas other than the material gas introduced into the second inner space is a nitrogen atom-contained gas, and wherein said method further includes:

adjusting the flow rate of the nitrogen atom-contained gas being introduced into the second inner space during the formation of the silicon oxide film on the silicon substrate to at least the maximum value, at least, at the time of start of the formation of the silicon oxide film on the silicon substrate.

2. The method as defined in claim 1, wherein the flow rate of the nitrogen atom-contained gas to be introduced into the second inner space is set equal to a constant flow rate during a predetermined period from the start time of the formation of the silicon oxide film on the silicon substrate until the end time of the same.

3. The method as defined in claim 1, wherein the flow rate of the nitrogen atom-contained gas to be introduced into the second inner space is continually decreased with the elapse of the time, beginning with the start time of the formation of the silicon oxide film on the silicon substrate.

4. The method as defined in claim 1, wherein the flow rate of the nitrogen atom-contained gas introduced into the second inner space is gradually decreased with the elapse of the time, beginning with the start time of the formation of the silicon oxide film on the silicon substrate.

5. The method as defined in claim 1, wherein the nitrogen atom-contained gas as any suitable gas other than the material gas to be introduced into the second inner space is combined with the oxygen atom-contained gas as the suitable gas that is different from the nitrogen atom-contained gas.

6. The method as defined in claim 5, wherein the flow rate of the nitrogen atom-contained gas to be introduced into the second inner space is set equal to zero (0) at a predetermined time during the period from the start time of the formation of silicon oxide film until the end time of the same, and the oxygen atom-contained gas as the suitable gas that is different from the nitrogen atom-contained gas continues to be introduced into the second inner space even after the flow rate has been set equal to zero (0).

7. The method as defined in claim 1, wherein the material gas is any one or more of silane gases as expressed in terms of the chemical formula of S_iH_2n+n (n denotes any integer).

8. The method as defined in claim 1, wherein the nitrogen atom-contained gas is any one or more of dinitrogen monoxide (N₂O), nitrogen monoxide (NO) and nitrogen dioxide (NO₂).