Film Formation method and apparatus for forming silicon-containing insulating film
First Claim
1. A film formation method for a semiconductor process for forming a silicon-containing insulating film on a target substrate by CVD, in a process field configured to be selectively supplied with a first process gas comprising di-iso-propylaminosilane gas and a second process gas comprising an oxidizing gas or nitiriding gas, the method being arranged to perform a cycle a plurality of times to laminate thin films formed by respective times, thereby forming the silicon-containing insulating film with a predetermined thickness, the cycle alternately comprising:
- a first step of performing supply of the first process gas to the process field while maintaining a shut-off state of supply of the second process gas to the process field, thereby forming an adsorption layer containing silicon on a surface of the target substrate; and
a second step of performing supply of the second process gas to the process field while maintaining a shut-off state of supply of the first process gas to the process field, thereby oxidizing or nitiriding the adsorption layer on the surface of the target substrate, the second step comprising an excitation period of supplying the second process gas to the process field while exciting the second process gas by an exciting mechanism.
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Abstract
A silicon-containing insulating film is formed on a target substrate by CVD, in a process field to be selectively supplied with a first process gas including di-iso-propylaminosilane gas and a second process gas including an oxidizing gas or nitriding gas. The film is formed by performing a plurality of times a cycle alternately including first and second steps. The first step performs supply of the first process gas, thereby forming an adsorption layer containing silicon on a surface of the target substrate. The second performs supply of the second process gas, thereby oxidizing or nitriding the adsorption layer on the surface of the target substrate. The second step includes an excitation period of supplying the second process gas to the process field while exciting the second process gas by an exciting mechanism.
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Citations
20 Claims
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1. A film formation method for a semiconductor process for forming a silicon-containing insulating film on a target substrate by CVD, in a process field configured to be selectively supplied with a first process gas comprising di-iso-propylaminosilane gas and a second process gas comprising an oxidizing gas or nitiriding gas, the method being arranged to perform a cycle a plurality of times to laminate thin films formed by respective times, thereby forming the silicon-containing insulating film with a predetermined thickness, the cycle alternately comprising:
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a first step of performing supply of the first process gas to the process field while maintaining a shut-off state of supply of the second process gas to the process field, thereby forming an adsorption layer containing silicon on a surface of the target substrate; and a second step of performing supply of the second process gas to the process field while maintaining a shut-off state of supply of the first process gas to the process field, thereby oxidizing or nitiriding the adsorption layer on the surface of the target substrate, the second step comprising an excitation period of supplying the second process gas to the process field while exciting the second process gas by an exciting mechanism. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18)
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19. A film formation apparatus for a semiconductor process for forming a silicon-containing insulating film, the apparatus comprising:
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a reaction chamber having a process field configured to accommodate a target substrate; a support member configured to support the target substrate inside the process field; a heater configured to heat the target substrate inside the process field; an exhaust system configured to exhaust gas from the process field; a first process gas supply circuit configured to supply a first process gas comprising di-iso-propylaminosilane gas to the process field; a second process gas supply circuit configured to supply a second process gas comprising an oxidizing gas or nitiriding gas to the process field; an exciting mechanism configured to excite the second process gas to be supplied to the process field; and a control section configured to control an operation of the apparatus, wherein, in order to form a silicon-containing insulating film on the target substrate by CVD, the control section is preset to perform a cycle a plurality of times to laminate thin films formed by respective times, thereby forming the silicon-containing insulating film with a predetermined thickness, the cycle alternately comprising a first step of performing supply of the first process gas to the process field while maintaining a shut-off state of supply of the second process gas to the process field, thereby forming an adsorption layer containing silicon on a surface of the target substrate, and a second step of performing supply of the second process gas to the process field while maintaining a shut-off state of supply of the first process gas to the process field, thereby oxidizing or nitriding the adsorption layer on the surface of the target substrate, the second step comprising an excitation period of supplying the second process gas to the process field while exciting the second process gas by the exciting mechanism.
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20. A computer readable medium containing program instructions for execution on a processor, which is used for a film formation apparatus for a semiconductor process for forming a silicon-containing insulating film on a target substrate by CVD, in a process field configured to be selectively supplied with a first process gas comprising di-iso-propylaminosilane gas and a second process gas comprising an oxidizing gas or nitriding gas, wherein the program instructions, when executed by the processor, control the film formation apparatus to perform a cycle a plurality of times to laminate thin films formed by respective times, thereby forming the silicon-containing insulating film with a predetermined thickness, the cycle alternately comprising:
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a first step of performing supply of the first process gas to the process field while maintaining a shut-off state of supply of the second process gas to the process field, thereby forming an adsorption layer containing silicon on a surface of the target substrate; and a second step of performing supply of the second process gas to the process field while maintaining a shut-off state of supply of the first process gas to the process field, thereby oxidizing or nitriding the adsorption layer on the surface of the target substrate, the second step comprising an excitation period of supplying the second process gas to the process field while exciting the second process gas by an exciting mechanism.
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Specification