PLASMA PROCESSING APPARATUS AND METHOD, AND BAFFLE PLATE OF THE PLASMA PROCESSING APPARATUS

• US 20090206055A1
• Filed: 02/19/2009
• Published: 08/20/2009
• Est. Priority Date: 02/20/2008
• Status: Abandoned Application

• Current Assignee: Tokyo Electron Limited
• Original Assignee: Tokyo Electron Limited
• Inventors: SATO, Tetsuji, Yoshimura, Akihiro
• Application Number:
  US12/388,843
• Publication Number:
  US 20090206055A1
• Time in Patent Office: Days
• US Class Current: 216/58
• CPC Class Codes: H01J 37/32449 Gas control, e.g. control of the gas flow
• CPC Class Codes: H01J 37/32623 Mechanical discharge control means
• CPC Class Codes: H01J 37/32633 Baffles

Abstract

In a plasma processing apparatus for performing a plasma process on a target substrate, a baffle plate has an opening through which the process passes and partitions the internal space of the processing container into a plasma process space and an exhaust space, the opening being a single continuous slit. The baffle plate is disposed in an annular gas exhaust path around the mounting table, and the slit includes a plurality of linear slit portions extending in a radial direction of the annular baffle plate and a plurality of curved slit portions, each of which interconnects ends of a pair of the adjacent linear slit portions, so that the slit is formed in a wave shape in its entirety.

Claims

1. A plasma processing apparatus for performing a plasma process on a target substrate, comprising:

a processing chamber into and from which the target substrate is loaded and unloaded;

a mounting table provided within the processing chamber, the target substrate being mounted on the mounting base;

an inlet through which a process gas is introduced into the processing container;

a radio frequency power supply for exciting the process gas in the processing container to generate plasma;

a gas exhaust port through which the process gas is exhausted out of the processing container; and

a baffle plate having an opening through which the process passes and partitioning the internal space of the processing container into a plasma process space and an exhaust space, the opening being a single continuous slit.

2. The plasma processing apparatus of claim 1, wherein the baffle plate is disposed in an annular gas exhaust path around the mounting table, and the slit includes a plurality of linear slit portions extending in a radial direction of the annular baffle plate and a plurality of curved slit portions, each of which interconnects ends of a pair of the adjacent linear slit portions, so that the slit is formed in a wave shape in its entirety.

3. The plasma processing apparatus of claim 1, wherein the baffle plate includes:

a first member having a first ring-shaped body portion and a plurality of first projections projecting outwardly from the first ring-shaped body portion; and

a second member having a second ring-shaped body portion larger in diameter than the first ring-shaped body portion of the first member and a plurality of second projections projecting inwardly from the second ring-shaped body portion,

wherein the slit is formed between the first member and the second member.

4. The plasma processing apparatus of claim 3, wherein a reinforcing member is arranged between the first member and the second member.

5. The plasma processing apparatus of claim 3 or 4, wherein each of the first and second members is formed with a plurality of sectorial members.

6. The plasma processing apparatus of claim 1, wherein the baffle plate is disposed in an annular gas exhaust path around the mounting base, and the slit is formed in a spiral shape extending in a circumference direction along the annular baffle plate.

7. The plasma processing apparatus of any one of claims 1 to 6, wherein an aspect ratio of thickness to width of the slit is set to be 2 to 8.

8. A baffle plate of a plasma processing apparatus in which a process gas is introduced into a processing chamber, plasma is generated by exciting the process gas in the processing chamber using radio frequency power, and the process gas is exhausted out of the processing chamber, the baffle plate partitioning the internal space of the processing chamber into a process space and an exhaust space,

wherein an opening of the baffle plate through which the process gas passes is a single continuous slit.

9. A baffle plate of a plasma processing apparatus in which a process gas is introduced into a processing container, plasma is generated by exciting the process gas in the processing chamber using radio frequency power, and the process gas is exhausted out of the processing chamber, the baffle plate partitioning the internal space of the processing chamber into a process space and an exhaust space,

wherein the baffle plate is disposed in an annular gas exhaust path around a mounting table on which a target substrate is mounted, and

wherein an opening of the baffle plate through which the process gas passes is a slit including a plurality of linear slit portions extending in a radial direction of the annular baffle plate and a plurality of curved slit portions, each of which interconnects ends of a pair of the adjacent linear slit portions, the slit being formed in a wave shape in its entirety.

10. A baffle plate of a plasma processing apparatus in which a process gas is introduced into a processing chamber, plasma is generated by exciting the process gas in the processing chamber using radio frequency power, and the process gas is exhausted out of the processing chamber, the baffle plate partitioning the internal space of the processing plate into a process space and an exhaust space,

wherein the baffle plate is disposed in an annular gas exhaust path around a mounting table on which a target substrate is mounted, and

wherein an opening of the baffle plate through which the process gas passes is a slit which is formed in a spiral shape extending in a circumference direction along the annular baffle plate.

11. A plasma processing method for performing a plasma process on a target substrate, comprising:

introducing a process gas into a processing chamber through an inlet, the target substrate being placed within the processing chamber;

generating plasma by exciting the process gas in the processing chamber using radio frequency power; and

exhausting the process gas out of the processing chamber through a gas exhaust port via a baffle plate having an opening of a single continuous slit and partitioning the internal space of the processing chamber into a plasma process space and an exhaust space.