Method and Apparatus for Plasma Process Performance Matching in Multiple Wafer Chambers

• US 20090206056A1
• Filed: 02/06/2009
• Published: 08/20/2009
• Est. Priority Date: 02/14/2008
• Status: Abandoned Application

• Current Assignee: Mattson Technology, Inc. (Beijing Economic & Technology Development Area)
• Original Assignee: Mattson Technology, Inc. (Beijing Economic & Technology Development Area)
• Inventors: Vaniapura, Vijay, Qin, Ce, Devine, Daniel J., Xu, Songlin, Ma, Wen
• Application Number:
  US12/367,488
• Publication Number:
  US 20090206056A1
• Time in Patent Office: Days
• US Class Current: 216/59
• CPC Class Codes: H01J 37/3244 Gas supply means
• CPC Class Codes: H01J 37/32449 Gas control, e.g. control of the gas flow

Abstract

A multi-station workpiece processing system provides a targeted equal share of a regulated input process gas flow to each active processing station of a plurality of active processing stations using a single gas flow regulator for each gas and irrespective of the number of inactive processing stations.

Claims

1. In a multi-station workpiece processing system having a single chamber including at least two processing stations for simultaneously processing two or more workpieces with one workpiece located at each station, a method for processing at least one workpiece at one active one of the processing stations with at least one other one of the processing stations inactive, each of said processing stations including a plasma generator that receives a processing station gas supply for use in generating a plasma to treat a particular workpiece at that processing station, and wherein at least a portion of said processing station gas supply, that is released in the plasma generator at a given one of the processing stations, is capable of flowing, as a cross-flow, to at least one other one of the processing stations through the chamber arrangement, irrespective of whether the given processing station is active or inactive, said system further being configured for producing a full workload gas flow that is distributed to all the processing stations from an overall gas input to produce said processing station gas supply for the plasma generator of each processing station such that each processing station receives, at least approximately, a target equal share of the full workload gas flow, as said processing station gas supply, when all of the processing stations are active, said method comprising:

selecting less than said total number of processing stations as active processing stations such that at least one processing station is selected to actively process a workpiece while at least one other one of the processing stations is inactive and does not process a workpiece;

terminating the gas supply to the inactive process stations;

corresponding to each inactive processing station, reducing the full workload gas flow by an amount that is approximately equal to the full workload gas flow divided by the total number of processing stations to produce a current gas flow, at the overall gas input, that is distributed among the active processing stations such that each active processing station receives, at least approximately, said target equal share of the current gas flow, irrespective of the inactive processing stations, and said cross-flow from inactive ones of the processing stations to active ones of the processing stations is eliminated such that a cross-flow related process influence at the active processing stations, which would otherwise be produced by emitting the processing station gas supply at the inactive processing stations, is eliminated. This eliminates the need for separate sets of flow controllers to each process station.

2. In a multi-station workpiece processing system having a chamber arrangement including a total number of at least two processing stations for simultaneously processing two or more workpieces with one workpiece located at each station, each of said processing stations including a plasma generator that receives a processing station gas supply for use in generating a plasma to treat a particular workpiece at that processing station, and wherein at least a portion of said processing station gas supply, that is released at a given one of the processing stations, is capable of flowing, as a cross-flow, to at least one other one of the processing stations through the chamber arrangement, irrespective of whether the given processing station is active or inactive, said system further being configured for producing a full workload gas flow that is distributed to all the processing stations from an overall gas input such that each processing station receives, at least approximately, a target equal share of the full workload gas flow when all of the processing stations are active, an apparatus, forming part of said system, providing for processing at least one workpiece at one active one of the processing stations with at least one other one of the processing stations inactive, said apparatus comprising:

a user input arrangement for allowing an operator of said system to electronically select less than the total number of processing stations as active processing stations such that at least one processing station is selected to actively process a workpiece while at least one other one of the processing stations is inactive and does not process a workpiece; and

a control arrangement, responsive to said user input arrangement, for generating at least one control signal to electrically terminate the processing station gas supply to each inactive process stations and for reducing the full workload gas flow, corresponding to each inactive processing station, by an amount that is approximately equal to the full workload gas flow divided by the total number of processing stations to produce a current gas flow, at the overall gas input, that is distributed among the active processing stations such that each one of the active processing stations receives, at least approximately, said target equal share of the current gas flow, irrespective of the inactive processing stations, and said cross-flow from inactive ones of the processing stations to active ones of the processing stations is eliminated such that a cross-flow related process influence at the active processing stations, which would otherwise be produced by emitting the processing station gas supply at the inactive processing stations, is eliminated.

3. In a multi-station workpiece processing system having a single chamber including at least two processing stations for simultaneously processing two or more workpieces with one workpiece located at each station, a method for processing the workpiece at each active one of the processing stations with at least one other one of the processing stations inactive, each of said processing stations including a plasma generator that receives a processing station gas supply for use in generating a plasma to treat a particular workpiece at that processing station, said system further being configured for producing a full workload gas flow that is regulated and then distributed to all the processing stations from an overall gas input to produce said processing station gas supply for the plasma generator of each processing station such that the processing station gas supply to each individual processing station is not regulated and each processing station receives, at least approximately, a target equal share of the full workload gas flow, as said processing station gas supply, when all of the processing stations are active and generating plasma, said method comprising:

selecting less than said total number of processing stations as active processing stations such that at least one processing station is selected to actively process a workpiece while at least one other one of the processing stations is inactive and does not produce a plasma so that each inactive processing station would cause a difference in gas conductance relative to the active processing stations which would unevenly divide the full workload gas flow between the processing stations;

terminating the gas supply to the inactive process stations; and

corresponding to each inactive processing station, reducing the full workload gas flow by an amount that is approximately equal to the full workload gas flow divided by the total number of processing stations to produce a current gas flow, at the overall gas input, that is distributed among the active processing stations without individual regulation of each processing station gas flow for each processing station such that each active processing station receives, at least approximately, said target equal share of the current gas flow, by eliminating the difference in gas conductance that would otherwise be caused by each one of the inactive processing stations.

4. The method of claim 4 further comprising:

sensing for the presence of a workpiece at a given one of the processing stations to indicate that the given one of the processing stations is inactive when a workpiece is not present and wherein said terminating responds to said sensing by automatically terminating the gas flow to the given processing station, and said reducing automatically decreases the current gas flow so that each active processing station receives said target equal share.

5. The method of claim 4 further comprising:

providing a user input arrangement for accepting a user input that indicates that at least a given one of the processing stations is inactive, and

said terminating responds to the user input by automatically terminating the gas flow to the given processing station and said reducing automatically decreases the current gas flow so that each active processing station receives said target equal share.

6. In a multi-station workpiece processing system having a chamber arrangement including a total number of at least two processing stations for simultaneously processing two or more workpieces with one workpiece located at each station, each of said processing stations including a plasma generator that receives a processing station gas supply for use in generating a plasma to treat a particular workpiece at that processing station, and said system further being configured for producing a full workload gas flow that is regulated and then distributed to all the processing stations from an overall gas input to produce said processing station gas supply for the plasma generator of each processing station such that the processing station gas supply to each individual processing station is not regulated and each processing station receives, at least approximately, a target equal share of the full workload gas flow when all of the processing stations are active, an apparatus comprising:

a control arrangement for electronically selecting less than the total number of processing stations as active processing stations with at least one processing station selected to actively process a workpiece while at least one other one of the processing stations is inactive and does not produce a plasma such that each inactive processing station would cause a difference in gas conductance relative to each of the active processing stations which would unevenly split the full workload gas flow between the processing stations, and for generating at least one control signal to electrically terminate the processing station gas supply to each inactive process station and reducing the full workload gas flow, corresponding to each inactive processing station, by an amount that is approximately equal to the full workload gas flow divided by the total number of processing stations to produce a current gas flow, at the overall gas input, that is distributed among the active processing stations without individual regulation of each processing station gas flow for each processing station such that each active processing station receives, at least approximately, said target equal share of the current gas flow, irrespective of the inactive processing stations, by eliminating the difference in gas conductance that would otherwise be caused by each of the inactive processing stations emitting process gas.

7. The apparatus of claim 6 further comprising:

a sensing arrangement including at least one sensor responsive to the presence of a workpiece at a given one of the processing stations to provide an indication that the given one of the processing stations is inactive when one workpiece is not present and said control arrangement is configured to respond to said indication by automatically terminating the gas flow to the given processing station and automatically decreasing the current gas flow so that each active processing station receives said target equal share.

8. The apparatus of claim 6 further comprising:

a user input arrangement for accepting a user input that indicates that at least a given one of the processing stations is inactive and said control arrangement is configured to respond to the user input by automatically terminating the gas flow to the given processing station and automatically decreasing the current gas flow so that each active processing station receives said target equal share.

9. The apparatus of claim 6 further comprising:

a plurality of gas supply lines such that one of the gas supply lines leads from the overall gas input to the plasma generator of each one of the processing stations; and

a plurality of electrically actuatable control valves each of which is in electrical communication with said control arrangement such that the control arrangement can selectively open and close each one of the control valves to selectively provide process gas to each processing station responsive to said control arrangement.

10. The apparatus of claim 6 wherein said workpieces are semiconductor wafers.