PATTERN INSPECTION METHOD AND INSPECTION APPARATUS
First Claim
1. A pattern inspection method of determining defective portions from an image generated based on secondary electrons or reflected electrons generated from a sample after causing an electron beam to repeatedly scan the sample reciprocatingly on a line, comprising the steps of:
- acquiring an image by a forward scan of the electron beam; and
acquiring an image, precharging, or discharging by a backward scan of the electron beam.
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Accused Products
Abstract
An object of the present invention is to provide an inspection apparatus and an inspection method excellent in that high-sensitivity defect detection performance is achieved without causing throughput degradation even if an adequate contrast of a defective region cannot be obtained due to characteristics of an inspected sample. To achieve the object, according to the present invention, an SEM pattern inspection apparatus for determining defective portions from an image generated based on secondary electrons or reflected electrons generated from the sample after causing an electron beam to repeatedly scan the inspected sample reciprocatingly on a line has a function to use a retrace of the electron beam for image acquisition, precharging, or discharging.
24 Citations
18 Claims
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1. A pattern inspection method of determining defective portions from an image generated based on secondary electrons or reflected electrons generated from a sample after causing an electron beam to repeatedly scan the sample reciprocatingly on a line, comprising the steps of:
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acquiring an image by a forward scan of the electron beam; and acquiring an image, precharging, or discharging by a backward scan of the electron beam. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9)
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10. A pattern inspection apparatus for detecting defects of a sample, comprising:
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a scanning part for causing an electron beam to repeatedly scan the sample reciprocatingly on a line; an image acquisition part for generating an image based on secondary electrons or reflected electrons generated from the sample; a defect detection part for detecting defects from an image generated by the image acquisition means; a control part for controlling a scan with an electron beam by the scanning means; and a setting part for setting scanning conditions for the electron beam controlled by the control means; wherein the setting part has a means for setting an operation by a forward scan of the electron beam to any one of image acquisition, precharging, and discharging. - View Dependent Claims (11, 12, 13, 14, 15, 16, 17, 18)
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Specification