GROUP III NITRIDE WHITE LIGHT EMITTING DIODE
First Claim
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1. A diode for emitting white-light, the diode comprising:
- a substrate;
a buffer layer formed over the substrate, the buffer layer being divided into a first section and a second section; and
at lease one quantum well structure comprising a modified InxGa1-xN/InyGa1-yN quantum well/barrier bilayer that encompasses InN and indium-rich InGaN quantum dots, formed over the first section of the buffer layer, wherein the modified quantum well structure exhibits a photoluminescence spectrum simultaneously covering the primary colours of blue, green and red.
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Abstract
A white light-emitting diode is fabricated by metal organic chemical vapor deposition (MOCVD), which can produce a broad band emission covering all the visible range in the spectrum by capping the Indium nitride (InN) and Indium-rich Indium Gallium Nitride (InGaN) quantum dots (QDs) in single or multiple InxGa1-xN/InyGa1-yN quantum wells (QWs) by introducing bursts of at least one of Timethylindium (TMIn), Triethylindium (TEIn) and Ethyldimethylindium (EDMIn), which serve as nuclei for the growth of QDs in QWs. The diode can thus radiate white light ranging from 400 nm to 750 nm by adjusting the In burst parameters.
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Citations
20 Claims
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1. A diode for emitting white-light, the diode comprising:
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a substrate; a buffer layer formed over the substrate, the buffer layer being divided into a first section and a second section; and at lease one quantum well structure comprising a modified InxGa1-xN/InyGa1-yN quantum well/barrier bilayer that encompasses InN and indium-rich InGaN quantum dots, formed over the first section of the buffer layer, wherein the modified quantum well structure exhibits a photoluminescence spectrum simultaneously covering the primary colours of blue, green and red. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8)
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9. A modified quantum well structure that emits white light, which comprises:
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an InxGa1-xN quantum well layer; InN and indium-rich InGaN quantum dots embedded in the InxGa1-xN quantum well layer; and an InyGa1-yN quantum barrier layer over the quantum dots and the quantum well layer, wherein the modified quantum well structure exhibits a photoluminescence spectrum simultaneously covering the primary colours of blue, green and red. - View Dependent Claims (10, 11, 12)
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13. A process for forming a diode for emitting white light, the process comprising the steps of:
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providing a substrate; forming a buffer layer formed over the substrate, the buffer layer being divided into a first section and a second section; and forming at least one quantum well structure comprising a modified InxGa1-xN/InyGa1-yN quantum well/barrier bilayer that encompasses InN and indium-rich InGaN quantum dots, formed over the first section of the buffer layer, the modified quantum well structure exhibiting a photoluminescence spectrum simultaneously covering the primary colours of blue, green and red. - View Dependent Claims (14, 15, 16, 17, 18, 19, 20)
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Specification