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GROUP III NITRIDE WHITE LIGHT EMITTING DIODE

  • US 20090206320A1
  • Filed: 03/24/2005
  • Published: 08/20/2009
  • Est. Priority Date: 03/24/2005
  • Status: Abandoned Application
First Claim
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1. A diode for emitting white-light, the diode comprising:

  • a substrate;

    a buffer layer formed over the substrate, the buffer layer being divided into a first section and a second section; and

    at lease one quantum well structure comprising a modified InxGa1-xN/InyGa1-yN quantum well/barrier bilayer that encompasses InN and indium-rich InGaN quantum dots, formed over the first section of the buffer layer, wherein the modified quantum well structure exhibits a photoluminescence spectrum simultaneously covering the primary colours of blue, green and red.

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