LIGHT-EMITTING ELEMENT AND METHOD FOR MANUFACTURING THE SAME

• US 20090206323A1
• Filed: 02/17/2009
• Published: 08/20/2009
• Est. Priority Date: 02/18/2008
• Status: Active Grant

• Current Assignee: Hiroshima University
• Original Assignee: Hiroshima University
• Inventors: Yokoyama, Shin
• Granted Patent: US 8,368,046 B2
• Time in Patent Office: Days
• US Class Current: 257/13
• CPC Class Codes: B82Y 10/00 Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
• CPC Class Codes: H01L 29/127 Quantum box structures
• CPC Class Codes: H01L 33/06 within the light emitting region, e.g. quantum confinement structure or tunnel barrier
• CPC Class Codes: H01L 33/26 Materials of the light emitting region

Abstract

A light-emitting element includes a n-type silicon oxide film and a p-type silicon nitride film. The n-type silicon oxide film and the p-type silicon nitride film formed on the n-type silicon oxide film form a p-n junction. The n-type silicon oxide film includes a plurality of quantum dots composed of n-type Si while the p-type silicon nitride film includes a plurality of quantum dots composed of p-type Si. Light emission occurs from the boundary between the n-type silicon oxide film and the p-type silicon nitride film by injecting electrons from the n-type silicon oxide film side and holes from the p-type silicon nitride film side.

Claims

1. A light-emitting element comprising:

a first insulator including first quantum dots with a first conduction type; and

a second insulator including second quantum dots with a second conduction type that is different from the first conduction type, the second insulator being disposed on the first insulator.

2. The light-emitting element according to claim 1, wherein the first insulator includes a plurality of the first quantum dots, and the second insulator includes a plurality of the second quantum dots.

3. The light-emitting element according to claim 2, wherein the plurality of first quantum dots are irregularly arranged in a thickness direction of the first insulator, and the plurality of second quantum dots are irregularly arranged in a thickness direction of the second insulator.

4. The light-emitting element according to claim 1, wherein the first conduction type is n-type, and the second conduction type is p-type.

5. The light-emitting element according to claim 4, wherein a barrier energy against holes is larger than a barrier energy against electrons in the first insulator, and a barrier energy against electrons are larger than a barrier energy against holes in the second insulators.

6. The light-emitting element according to claim 5, wherein the first quantum dots and the second quantum dots are composed of silicon dots;

the first insulator is composed of a silicon oxide film; and

the second insulator is composed of a silicon nitride film.

7. The light-emitting element according to claim 4, further comprising a third insulator formed on the second insulator and including third quantum dots with the second conduction type, the third insulator having a larger barrier energy against electrons than the second insulator.

8. The light-emitting element according to claim 7, wherein the third insulator includes a plurality of the third quantum dots.

9. The light-emitting element according to claim 8, wherein the plurality of third quantum dots are irregularly arranged in a thickness direction of the third insulator.

10. The light-emitting element according to claim 9, wherein the first quantum dots, the second quantum dots, and the third quantum dots are composed of silicon dots;

the first insulator is composed of a silicon oxide film;

the second insulator is composed of a silicon nitride film; and

the third insulator is composed of a silicon oxynitride film.

11. A light-emitting element comprising:

a light-emitting layer;

a first insulator supplying electrons to the light-emitting layer through n-type quantum dots; and

a second insulator supplying holes to the light-emitting layer through p-type quantum dots.

12. The light-emitting element according to claim 11, wherein the first insulator is composed of a silicon oxide film and the second insulator is composed of a silicon nitride film.

13. A method for manufacturing a light-emitting element comprising:

depositing a first insulator including quantum dots on a principal surface of a semiconductor substrate;

depositing a second insulator including quantum dots on the first insulator;

introducing an impurity of a first conduction type into the first insulator;

introducing an impurity of a second conduction type that is different from the first conduction type into the second insulator; and

heat-treating the first insulator including the impurity of the first conduction type and the second insulator including the impurity of the second conduction type.

14. The method for manufacturing a light-emitting element according to claim 13, wherein, the first insulator that is composed of a silicon oxide film is deposited on the principal surface by adjusting a flow rate ratio of a second material gas including silicon relative to a first material gas including oxygen, to higher than or equal to a first standard flow rate ratio;

and, the second insulator that is composed of a silicon nitride film is deposited on the first insulator by adjusting a flow rate ratio of the second material gas relative to a third material gas including nitrogen, to higher than or equal to a second standard flow rate ratio.

15. The method for manufacturing a light-emitting element according to claim 14, wherein an n-type impurity is introduced into the first insulator and a p-type impurity is introduced into the second insulator.

16. The method for manufacturing a light-emitting element according to claim 15, wherein, the first insulator including the n-type impurity and the second insulator including the p-type impurity are heat-treated in a nitrogen atmosphere.

17. A method for manufacturing a light-emitting element comprising:

depositing a first insulator including quantum dots on a principal surface of a semiconductor substrate;

depositing a second insulator including quantum dots on the first insulator;

depositing a third insulator including quantum dots on the second insulator, the third insulator having a larger barrier energy against electrons than the second insulator;

introducing an impurity of a first conduction type into the first insulator;

introducing an impurity of a second conduction type that is different from the first conduction type into the second and third insulators; and

heat-treating the first insulator including the impurity of the first conduction type and the second and third insulators including the impurity of the second conduction type.