Semiconductor light-emitting device
First Claim
1. A semiconductor light-emitting device, comprising:
- a support structure; and
a light-emitting structure,wherein the support structure comprises;
a support substrate; and
a support substrate side bonding layer disposed on one surface of the support substrate, andthe light-emitting structure comprises;
a light-emitting structure side bonding layer bonded to the support substrate side bonding layer;
a reflection region disposed on the light-emitting structure side bonding layer opposite the support substrate; and
a semiconductor multilayer structure including a light-emitting layer disposed on the reflection region opposite the light-emitting structure side bonding layer for emitting a light with a predetermined wavelength, and a light-extraction surface disposed on the light-emitting layer opposite the reflection region for reflecting diffusely the light, wherein the reflection region includes a transparent layer comprising a material with a lower refractive index than that of the semiconductor multilayer structure, and a reflection layer comprising a metallic material, andthe transparent layer comprises such a thickness that interference caused by multiple reflection of light inputted to the transparent layer can be suppressed.
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Accused Products
Abstract
A semiconductor light-emitting device includes a support structure, and a light-emitting structure. The support structure includes a support substrate, and a support substrate side bonding layer disposed on one surface of the support substrate. The light-emitting structure includes a light-emitting structure side bonding layer bonded to the support substrate side bonding layer, a reflection region disposed on the support substrate side bonding layer opposite the support substrate, and a semiconductor multilayer structure including a light-emitting layer disposed on the reflection region opposite the light-emitting structure side bonding layer for emitting a light with a predetermined wavelength, and a light-extraction surface disposed on the light-emitting layer opposite the reflection region for reflecting diffusely the light. The reflection region includes a transparent layer of a material with a lower refractive index than that of the semiconductor multilayer structure, and a reflection layer of a metallic material. The transparent layer has such a thickness that interference caused by multiple reflection of light inputted to the transparent layer can be suppressed.
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Citations
10 Claims
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1. A semiconductor light-emitting device, comprising:
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a support structure; and a light-emitting structure, wherein the support structure comprises; a support substrate; and a support substrate side bonding layer disposed on one surface of the support substrate, and the light-emitting structure comprises; a light-emitting structure side bonding layer bonded to the support substrate side bonding layer; a reflection region disposed on the light-emitting structure side bonding layer opposite the support substrate; and a semiconductor multilayer structure including a light-emitting layer disposed on the reflection region opposite the light-emitting structure side bonding layer for emitting a light with a predetermined wavelength, and a light-extraction surface disposed on the light-emitting layer opposite the reflection region for reflecting diffusely the light, wherein the reflection region includes a transparent layer comprising a material with a lower refractive index than that of the semiconductor multilayer structure, and a reflection layer comprising a metallic material, and the transparent layer comprises such a thickness that interference caused by multiple reflection of light inputted to the transparent layer can be suppressed. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10)
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Specification