×

TRENCH TRANSISTOR AND METHOD FOR FABRICATING A TRENCH TRANSISTOR

  • US 20090206401A1
  • Filed: 08/05/2008
  • Published: 08/20/2009
  • Est. Priority Date: 08/31/2005
  • Status: Active Grant
First Claim
Patent Images

1. A method for producing a trench transistor from a preprocessed semiconductor body, comprising:

  • providing a trench structure;

    providing a field electrode structure embedded in the trench structure;

    wherein the field electrode structure is electrically insulated from the semiconductor body by a field electrode insulation structure by;

    depositing insulating material on the field electrode structure;

    forming a gate electrode insulation structure; and

    forming a gate electrode structure.

View all claims
  • 0 Assignments
Timeline View
Assignment View
    ×
    ×