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MULTI-GATE DEVICE HAVING A T-SHAPED GATE STRUCTURE

  • US 20090206406A1
  • Filed: 02/15/2008
  • Published: 08/20/2009
  • Est. Priority Date: 02/15/2008
  • Status: Active Grant
First Claim
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1. A method comprising:

  • forming a dummy gate pedestal having at least a first surface, a second surface, and a third surface wherein the first and second surfaces are substantially parallel to one another and wherein the third surface is substantially perpendicular to the first and second surfaces, the dummy gate pedestal comprising a dummy gate dielectric coupled to a gate region of a multi-gate fin, a first dummy gate material coupled to the dummy gate dielectric, and a second dummy gate material coupled to the first dummy gate material;

    depositing a first spacer dielectric film to the first and second surfaces of the dummy gate pedestal;

    depositing a second spacer dielectric film to the first spacer dielectric film;

    selectively removing the second dummy gate material of the dummy gate pedestal to expose a portion of the first spacer dielectric film previously coupled to the second dummy gate material;

    selectively removing the portion of the first spacer dielectric film previously coupled to the second dummy gate material;

    selectively removing the first dummy gate material and the dummy gate dielectric to form a T-shaped trench in the gate region; and

    forming a T-shaped gate stack in the T-shaped trench.

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