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DUAL METAL GATE STRUCTURES AND METHODS

  • US 20090206416A1
  • Filed: 02/19/2008
  • Published: 08/20/2009
  • Est. Priority Date: 02/19/2008
  • Status: Abandoned Application
First Claim
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1. A semiconductor structure comprising a first gate stack and a second gate stack located on a semiconductor substrate, wherein said first gate stack comprises a first gate dielectric vertically abutting said semiconductor substrate, a first metal portion vertically abutting said first gate dielectric and comprising a first metallic material, and a second metal portion vertically abutting said first metal portion and comprising a second metallic material which is different from said first metallic material, and wherein said second gate stack comprises a second gate dielectric vertically abutting said semiconductor substrate and a third metal portion vertically abutting said second gate dielectric and comprising said second metallic material.

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