SEMICONDUCTOR DEVICE MANUFACTURING METHOD, SEMICONDUCTOR DEVICE, AND WIRING BOARD
First Claim
1. A semiconductor device manufacturing method comprising:
- a semiconductor chip mounting step of mounting a semiconductor chip on a support board so as to expose a side of the semiconductor chip on which a plurality of terminal electrodes are provided;
an insulating layer forming step of forming an insulating layer so as to cover the side of the semiconductor chip on which the terminal electrodes are provided;
a through electrode forming step of forming through electrodes which connect to the terminal electrodes and pierce the insulating layer;
a metal wiring forming step of forming metal wiring connecting to the through electrodes on the insulating layer; and
an external terminal electrode forming step of forming external terminal electrodes for connecting the metal wiring to the outside on the metal wiring,wherein spacing between the adjacent external terminal electrodes is larger than spacing between the adjacent terminal electrodes.
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Accused Products
Abstract
In a semiconductor device manufacturing method, a semiconductor chip is mounted on a support board so as to expose a side of the semiconductor chip on which a plurality of terminal electrodes are provided. An insulating layer is formed so as to cover the side of the semiconductor chip on which the terminal electrodes are provided. Through electrodes connecting to the terminal electrodes and piercing the insulating layer are formed. Metal wirings connecting to the through electrodes are formed on the insulating layer. External terminal electrodes connecting the metal wiring are formed. Second spacing, spacing between the adjacent external terminal electrodes, is larger than first spacing, spacing between the adjacent terminal electrodes.
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Citations
18 Claims
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1. A semiconductor device manufacturing method comprising:
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a semiconductor chip mounting step of mounting a semiconductor chip on a support board so as to expose a side of the semiconductor chip on which a plurality of terminal electrodes are provided; an insulating layer forming step of forming an insulating layer so as to cover the side of the semiconductor chip on which the terminal electrodes are provided; a through electrode forming step of forming through electrodes which connect to the terminal electrodes and pierce the insulating layer; a metal wiring forming step of forming metal wiring connecting to the through electrodes on the insulating layer; and an external terminal electrode forming step of forming external terminal electrodes for connecting the metal wiring to the outside on the metal wiring, wherein spacing between the adjacent external terminal electrodes is larger than spacing between the adjacent terminal electrodes. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12)
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13. A semiconductor device comprising:
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a semiconductor chip; a support board which supports said semiconductor chip; a plurality of terminal electrodes provided on semiconductor chip; a plurality of external terminal electrodes which connect said terminal electrodes to the outside; and a fan out section which electrically connects said terminal electrodes and said external terminal electrodes, said fan out section including an insulating layer which covers said terminal electrodes; through electrodes which connect to said terminal electrodes and pierce the insulating layer; and metal wirings which connects to the through electrodes and are formed on the insulating layer, wherein spacing between said adjacent external terminal electrodes is larger than spacing between said adjacent terminal electrodes. - View Dependent Claims (14, 15, 16, 17, 18)
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Specification