SEMICONDUCTOR INTEGRATED CIRCUIT
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Abstract
A semiconductor integrated circuit has a first substrate of a first polarity to which a first substrate potential is given, a second substrate of the first polarity to which a second substrate potential different from the first substrate potential is given, and a third substrate of a second polarity different from the first polarity. The first substrate is insulated from a power source or ground to which a source of a MOSFET formed on the substrate is connected. The third substrate is disposed between the first and second substrates in adjacent relation to the first and second substrates. A circuit element is formed on the third substrate.
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Citations
57 Claims
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1-29. -29. (canceled)
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30. A semiconductor integrated circuit comprising:
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a first well of a first polarity to which a first potential is given; a second well of the first polarity to which a second potential different from the first potential is given; a third well of a second polarity different from the first polarity; a circuit element on the third well; a circuit in which NMOS transistors are connected in parallel is formed on the first well; and a circuit in which NMOS transistors are connected in series is formed on the second well, wherein; the first well is insulated from a power source or ground to which a source of a MOSFET formed on the first well is connected, and the third well is disposed between the first and second wells in adjacent relation to the first and second wells. - View Dependent Claims (31, 32, 33, 34, 35, 36, 37, 38, 39, 40, 41, 42, 43, 44, 45, 46, 47, 48, 49, 50, 51, 52, 53, 54, 55, 56, 57)
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Specification