HIGH-FREQUENCY SWITCH CIRCUIT
1 Assignment
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Accused Products
Abstract
A high frequency switch circuit is provided with a switch section composed of a field effect transistor having a plurality of bias circuits; and a potential generating circuit for generating a bias voltage from a control signal and supplying a bias circuit with the bias voltage. The field effect transistor serves as a path for a high frequency signal by turning on and off corresponding to the control signal. The bias circuit is provided for generating a potential difference between the drain terminal and the source terminal of the field effect transistor and for applying a bias voltage lower than the voltage of the control signal to the drain terminal and the source terminal.
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Citations
26 Claims
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1-13. -13. (canceled)
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14. A high-frequency switch circuit for allowing a high-frequency signal to pass through or for cutting off a high-frequency signal in accordance with a control signal, comprising:
- a switch section including a field effect transistor that turns on and off in accordance with said control signal applied via a resistance element and that forms the passage route of said high-frequency signal, and a plurality of bias circuits for applying different bias voltages that is lower than the voltage of said control signal so as to produce a potential difference between the drain terminal and the source terminal of said field effect transistor; and
, a potential generating circuit for generating said bias voltages from said control signal and supplying them to said bias circuits. - View Dependent Claims (15, 16, 17, 18, 19, 20, 21, 22, 23, 24, 25, 26)
- a switch section including a field effect transistor that turns on and off in accordance with said control signal applied via a resistance element and that forms the passage route of said high-frequency signal, and a plurality of bias circuits for applying different bias voltages that is lower than the voltage of said control signal so as to produce a potential difference between the drain terminal and the source terminal of said field effect transistor; and
Specification