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Multi-Transistor Non-Volatile Memory Element

  • US 20090207662A1
  • Filed: 02/20/2008
  • Published: 08/20/2009
  • Est. Priority Date: 02/20/2008
  • Status: Active Grant
First Claim
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1. A multi-transistor element, comprising:

  • a substrate;

    a first floating gate stack disposed on the substrate;

    a second floating gate stack disposed on the substrate and coupled to the first floating gate stack; and

    a first active region disposed in the substrate and coupled to the first and second floating gate stacks.

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