Silicon Dioxide Thin Films by ALD
First Claim
Patent Images
1. An atomic layer deposition (ALD) process for producing a thin film comprising silicon dioxide on a substrate comprising a deposition cycle comprising:
- contacting a substrate with a vaporized silicon compound such that the silicon compound adsorbs to the substrate; and
converting the adsorbed silicon compound into silicon dioxide by contacting it with a reactive vaporized oxygen source compound;
wherein the silicon compound has a Si—
Si bond and formula of;
RIII3-x(RIIRIN)x—
Si—
Si—
(N—
RIRII)yRIII3-y,wherein the x is selected from 1 to 3;
y is selected from 1 to 3;
RI is selected from the group consisting of hydrogen, alkyl and substituted alkyl;
RII is selected from the group consisting of alkyl and substituted alkyl; and
RIII is selected from the group consisting of hydrogen, hydroxide (—
OH), amino (—
NH2), alkoxy, alkyl and substituted alkyl;
and wherein each x, y, RIII, RII and RI can be selected independently from each other.
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Abstract
Methods are provided for depositing silicon dioxide containing thin films on a substrate by atomic layer deposition ALD. By using disilane compounds as the silicon source, good deposition rates and uniformity are obtained.
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Citations
29 Claims
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1. An atomic layer deposition (ALD) process for producing a thin film comprising silicon dioxide on a substrate comprising a deposition cycle comprising:
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contacting a substrate with a vaporized silicon compound such that the silicon compound adsorbs to the substrate; and converting the adsorbed silicon compound into silicon dioxide by contacting it with a reactive vaporized oxygen source compound;
wherein the silicon compound has a Si—
Si bond and formula of;
RIII3-x(RIIRIN)x—
Si—
Si—
(N—
RIRII)yRIII3-y,wherein the x is selected from 1 to 3; y is selected from 1 to 3; RI is selected from the group consisting of hydrogen, alkyl and substituted alkyl; RII is selected from the group consisting of alkyl and substituted alkyl; and RIII is selected from the group consisting of hydrogen, hydroxide (—
OH), amino (—
NH2), alkoxy, alkyl and substituted alkyl;and wherein each x, y, RIII, RII and RI can be selected independently from each other. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20, 21, 22, 23, 24, 25)
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26. A method for forming a silicon dioxide thin film on a substrate in a reaction chamber by atomic layer deposition, the method comprising a deposition cycle comprising:
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providing a vapor phase pulse of a first reactant comprising a first silicon source precursor to the reaction chamber such that it forms no more than a monolayer on the substrate; removing excess first reactant from the reaction chamber; providing a vapor phase pulse of a second reactant comprising an oxygen source to the reaction chamber; and removing excess second reactant and any reaction byproducts from the reaction chamber; wherein the providing and removing steps are repeated until a thin silicon dioxide film of a desired thickness is obtained, and wherein the silicon compound is hexakis(monoalkylamino)disilane (RII—
NH)3—
Si—
Si—
(NH—
RII)3 and RII is selected from the group consisting of alkyl and substituted alkyl. - View Dependent Claims (27)
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28. A method for forming a silicon dioxide thin film by atomic layer deposition on a substrate in a reaction chamber comprising:
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alternately and sequentially providing a vapor phase reactant pulse comprising a silicon precursor and a vapor phase reactant pulse comprising an oxygen precursor to the reaction chamber; wherein the vapor phase reactant pulses are repeated until a thin film of a desired thickness is obtained;
wherein the silicon compound is hexakis(ethylamino)disilane (Et-NH)3—
Si—
Si—
(NH-Et)3. - View Dependent Claims (29)
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Specification