SYSTEM AND METHOD TO PREDICT CHIP IDDQ AND CONTROL LEAKAGE COMPONENTS
First Claim
1. A method for creating a leakage model, comprising:
- placing an integrated circuit quiescent current (IDDQ) prediction macro in a plurality of design topographies;
collecting data using the IDDQ prediction macro;
measuring subthreshold leakage and gate leakage for at least one device type in a semiconductor test site and in scribe lines;
establishing a leakage model;
correlating the semiconductor test site measurements to the scribe line measurements to establish scribe line control limits;
predicting product leakage; and
setting subthreshold leakage limits and gate leakage limits for each product using the leakage model.
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Abstract
A method for predicting and controlling leakage wherein an IDDQ prediction macro is placed in a plurality of design topographies and data is collected using the IDDQ prediction macro. The IDDQ prediction macro is configured to measure subthreshold leakage and gate leakage for at least one device type in a semiconductor test site and in scribe lines using the IDDQ prediction macro and establish a leakage model. The method correlates the semiconductor test site measurements and the scribe line measurements to establish scribe line control limits, predicts product leakage; and sets subthreshold leakage limits and gate leakage limits for each product using the leakage model.
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Citations
20 Claims
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1. A method for creating a leakage model, comprising:
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placing an integrated circuit quiescent current (IDDQ) prediction macro in a plurality of design topographies; collecting data using the IDDQ prediction macro; measuring subthreshold leakage and gate leakage for at least one device type in a semiconductor test site and in scribe lines; establishing a leakage model; correlating the semiconductor test site measurements to the scribe line measurements to establish scribe line control limits; predicting product leakage; and setting subthreshold leakage limits and gate leakage limits for each product using the leakage model. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8)
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9. A method for analyzing product yields, comprising:
providing a computer infrastructure operable to; set subthreshold leakage limits and gate leakage limits for a product using a leakage model; screen the product to obtain subthreshold leakage and gate leakage yield losses; determine whether one or more of the subthreshold leakage and the gate leakage exceed the subthreshold leakage limits and gate leakage limits; and provide feedback if one or more of the subthreshold leakage limits and the gate leakage limits are exceeded. - View Dependent Claims (10, 11, 12, 13, 14)
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15. A computer program product comprising a computer usable medium having readable program code embodied in the medium, the computer program product includes at least one component to:
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measure subthreshold leakage and gate leakage using an IDDQ prediction macro; create a leakage model using the measurements collected from the IDDQ prediction macro; correlate a product'"'"'s scribe line measurements to the measurements collected from the IDDQ prediction macro; track yield losses for the subthreshold leakage and the gate leakage of the product; and determine whether the subthreshold leakage and/or the gate leakage of the product has been exceeded based on the model. - View Dependent Claims (16, 17, 18, 19, 20)
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Specification