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GALLIUM NITRIDE-BASED COMPOUND SEMICONDUCTOR LIGHT EMITTING DEVICE

  • US 20090212319A1
  • Filed: 06/08/2007
  • Published: 08/27/2009
  • Est. Priority Date: 06/13/2006
  • Status: Active Grant
First Claim
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1. A light emitting device comprising a substrate and a gallium nitride-based compound semiconductor layer formed on the substrate, wherein a planar shape is a rectangular shape with vertical and longitudinal sides each having a different length, and a side surface of the gallium nitride-based compound semiconductor layer is not vertical to a principal surface of the substrate.

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