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TRENCH MOSEFT WITH TRENCH GATES UNDERNEATH CONTACT AREAS OF ESD DIODE FOR PREVENTION OF GATE AND SOURCE SHORTATE

  • US 20090212354A1
  • Filed: 02/23/2008
  • Published: 08/27/2009
  • Est. Priority Date: 02/23/2008
  • Status: Abandoned Application
First Claim
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1. A trench DMOS transistor having overvoltage protection with prevention of shortage between gate and source from ESD, comprising:

  • a substrate of a first conductivity type;

    a body region on the substrate, said body region having a second conductivity type;

    a source region of the first conductivity type in said body region adjacent to each trench in DMOS area;

    a conductive electrode in the trench overlying the insulating layer;

    a gate oxide layer that lines along the trench and an insulating layer overlies said body region;

    a ESD protection diode on top of said insulating layer; and

    trench gates underneath contact areas of said ESD diode;

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